Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission

2013 ◽  
Vol 113 (11) ◽  
pp. 114306 ◽  
Author(s):  
S. Albert ◽  
A. Bengoechea-Encabo ◽  
M. A. Sanchez-Garcia ◽  
E. Calleja ◽  
U. Jahn
Keyword(s):  
White Light ◽  
Light Emission ◽  
White Light Emission ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

scholarly journals Advances in MBE Selective Area Growth of III-Nitride Nanostructures: From NanoLEDs to Pseudo Substrates

2014 ◽  
Vol 23 (03n04) ◽  
pp. 1450020 ◽  
Author(s):  
Steven Albert ◽  
Ana Maria Bengoechea-Encabo ◽  
Francesca Barbagini ◽  
David Lopez-Rormero ◽  
Miguel Angel Sanchez-Garcia ◽  
...  
Keyword(s):  
Light Emission ◽  
Defect Density ◽  
Building Blocks ◽  
Infrared Range ◽  
Selective Area Growth ◽  
Dramatic Improvement ◽  
Selective Area ◽  
Area Growth ◽  
Ordered Array

The aim of this work is to provide an overview on the recent advances in the selective area growth (SAG) of ( In ) GaN nanostructures by plasma assisted molecular beam epitaxy, focusing on their potential as building blocks for next generation LEDs. The first three sections deal with the basic growth mechanisms of GaN SAG and the emission control in the entire ultraviolet to infrared range, including approaches for white light emission, using InGaN disks and thick segments on axial nanocolumns. SAG of axial nanostructures is developed on both GaN /sapphire templates and GaN -buffered Si (111). As an alternative to axial nanocolumns, section 4 reports on the growth and characterization of InGaN / GaN core-shell structures on an ordered array of top-down patterned GaN microrods. Finally, section 5 reports on the SAG of GaN , with and without InGaN insertion, on semi-polar (11-22) and non-polar (11-20) templates. Upon SAG the high defect density present in the templates is strongly reduced as indicated by a dramatic improvement of the optical properties. In the case of SAG on non-polar (11-22) templates, the formation of nanostructures with a low aspect ratio took place allowing for the fabrication of high-quality, non-polar GaN pseudo-templates by coalescence of these nanostructures.

scholarly journals Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 366 ◽  
Author(s):  
Alexana Roshko ◽  
Matt Brubaker ◽  
Paul Blanchard ◽  
Todd Harvey ◽  
Kris Bertness
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Buffer Layers ◽  
Selective Area Growth ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth ◽  
Eutectic Formation

Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice mismatch between the SAG and buffer. Defects related to Al–Si eutectic formation were observed in all samples, irrespective of lattice mismatch and buffer layer polarity. Eutectic related defects in the Si surface caused voids in N-polar samples, but not in metal-polar samples. Likewise, inversion domains were present in N-polar, but not metal-polar samples. The morphology of Ga-polar GaN SAG on nitride buffered Si(111) was similar to that of homoepitaxial GaN SAG.

Spray pyrolysis synthesis and characterization of Mg1-xSrxMoO4 heterostructure with white light emission

2020 ◽  
Vol 813 ◽  
pp. 152235 ◽  
Author(s):  
A.A.G. Santiago ◽  
R.L. Tranquilin ◽  
P. Botella ◽  
F.J. Manjón ◽  
D. Errandonea ◽  
...  
Keyword(s):  
Spray Pyrolysis ◽  
White Light ◽  
Light Emission ◽  
White Light Emission ◽  
Synthesis And Characterization ◽  
Pyrolysis Synthesis

μ-EXAFS, μ-XRF, and μ-PL Characterization of a Multi-Quantum-Well Electroabsorption Modulated Laser Realized via Selective Area Growth

Small ◽  
2011 ◽  
Vol 7 (7) ◽  
pp. 930-938 ◽  
Author(s):  
Lorenzo Mino ◽  
Diego Gianolio ◽  
Giovanni Agostini ◽  
Andrea Piovano ◽  
Marco Truccato ◽  
...  
Keyword(s):  
Quantum Well ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Multi Quantum Well

Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11–22) GaN templates

2013 ◽  
Vol 103 (24) ◽  
pp. 241905 ◽  
Author(s):  
A. Bengoechea-Encabo ◽  
S. Albert ◽  
J. Zuñiga-Perez ◽  
P. de Mierry ◽  
A. Trampert ◽  
...  
Keyword(s):  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Simulation and characterization of the selective area growth process

1999 ◽  
Vol 74 (18) ◽  
pp. 2617-2619 ◽  
Author(s):  
M. A. Alam ◽  
R. People ◽  
E. Isaacs ◽  
C. Y. Kim ◽  
K. Evans-Lutterodt ◽  
...  
Keyword(s):  
Growth Process ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth
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