The effect of ground and first excited state transitions on transistor laser relative intensity noise

2013 ◽  
Vol 102 (8) ◽  
pp. 081103 ◽  
Author(s):  
F. Tan ◽  
W. Xu ◽  
X. Huang ◽  
M. Feng ◽  
N. Holonyak
Keyword(s):  
Excited State ◽  
Relative Intensity ◽  
Relative Intensity Noise ◽  
State Transitions ◽  
Intensity Noise ◽  
Transistor Laser ◽  
First Excited State

Relative intensity noise of a quantum well transistor laser

2012 ◽  
Vol 101 (15) ◽  
pp. 151118 ◽  
Author(s):  
F. Tan ◽  
R. Bambery ◽  
M. Feng ◽  
N. Holonyak
Keyword(s):  
Quantum Well ◽  
Relative Intensity ◽  
Relative Intensity Noise ◽  
Intensity Noise ◽  
Transistor Laser

Coherently Combined DFB Laser Array Chip with Reduced Relative Intensity Noise

2021 ◽  
pp. 1-1
Author(s):  
Xiaoyang She ◽  
Bing Xiong ◽  
Changzheng Sun ◽  
Zhibiao Hao ◽  
Jian Wang ◽  
...  
Keyword(s):  
Relative Intensity ◽  
Relative Intensity Noise ◽  
Intensity Noise ◽  
Laser Array ◽  
Dfb Laser
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