Insulation degradation behavior of multilayer ceramic capacitors clarified by Kelvin probe force microscopy under ultra-high vacuum

2013 ◽  
Vol 113 (6) ◽  
pp. 064103 ◽  
Author(s):  
Keigo Suzuki ◽  
Takafumi Okamoto ◽  
Hiroyuki Kondo ◽  
Nobuhiko Tanaka ◽  
Akira Ando
Keyword(s):  
High Vacuum ◽  
Kelvin Probe Force Microscopy ◽  
Ultra High Vacuum ◽  
Degradation Behavior ◽  
Kelvin Probe ◽  
Multilayer Ceramic Capacitors ◽  
Force Microscopy ◽  
Ceramic Capacitors ◽  
Insulation Degradation ◽  
Multilayer Ceramic

The Kelvin Probe Force Microscopy Measurement of Degraded Multilayer Ceramic Capacitors with Ni Inner Electrode

2011 ◽  
Vol 485 ◽  
pp. 47-50 ◽  
Author(s):  
Takafumi Okamoto ◽  
Noriyuki Inoue ◽  
Shuji Kitagawa ◽  
Hideaki Niimi ◽  
Akira Ando ◽  
...  
Keyword(s):  
Degradation Mechanism ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Multilayer Ceramic Capacitors ◽  
Force Microscopy ◽  
Dielectric Layers ◽  
Lifetime Test ◽  
Ceramic Capacitors ◽  
Accelerated Lifetime ◽  
Multilayer Ceramic

Electric potential mapping of degraded dielectric layers of multilayer ceramic capacitors (MLCCs) was carried out using Kelvin probe force microscopy in order to clarify their degradation mechanism under conditions of an accelerated lifetime test condition. In the cross sections of the degraded and as-prepared dielectric layers, a significant electric field concentration was found in the vicinity of the anode of the degraded dielectric layer, in contrast to a homogeneous concentration found throughout layers of the samples before the accelerated lifetime test.

scholarly journals Elucidating the charge state of an Au nanocluster on the oxidized/reduced rutile TiO2 (110) surface using non-contact atomic force microscopy and Kelvin probe force microscopy

2020 ◽  
Vol 2 (6) ◽  
pp. 2371-2375 ◽  
Author(s):  
Yuuki Adachi ◽  
Huan Fei Wen ◽  
Quanzhen Zhang ◽  
Masato Miyazaki ◽  
Yasuhiro Sugawara ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Charge State ◽  
High Vacuum ◽  
Kelvin Probe Force Microscopy ◽  
Ultra High Vacuum ◽  
Kelvin Probe ◽  
Au Nanoclusters ◽  
Rutile Tio2 ◽  
Force Microscopy ◽  
Atomic Force

The charge state of Au nanoclusters on oxidized/reduced rutile TiO2 (110) surfaces were investigated by a combination of non-contact atomic force microscopy and Kelvin probe force microscopy at 78 K under ultra-high vacuum.

scholarly journals The role of the cantilever in Kelvin probe force microscopy measurements

2011 ◽  
Vol 2 ◽  
pp. 252-260 ◽  
Author(s):  
George Elias ◽  
Thilo Glatzel ◽  
Ernst Meyer ◽  
Alex Schwarzman ◽  
Amir Boag ◽  
...  
Keyword(s):  
Contact Potential Difference ◽  
High Vacuum ◽  
Kelvin Probe Force Microscopy ◽  
Ultra High Vacuum ◽  
Kelvin Probe ◽  
Contact Potential ◽  
Force Microscopy ◽  
Spread Function ◽  
Good Agreement

The role of the cantilever in quantitative Kelvin probe force microscopy (KPFM) is rigorously analyzed. We use the boundary element method to calculate the point spread function of the measuring probe: Tip and cantilever. The calculations show that the cantilever has a very strong effect on the absolute value of the measured contact potential difference even under ultra-high vacuum conditions, and we demonstrate a good agreement between our model and KPFM measurements in ultra-high vacuum of NaCl monolayers grown on Cu(111). The effect of the oscillating cantilever shape on the KPFM resolution and sensitivity has been calculated and found to be relatively small.

Laser cleaning of exfoliated graphene

2012 ◽  
Vol 1455 ◽  
Author(s):  
Oliver Ochedowski ◽  
Benedict Kleine Bußmann ◽  
Marika Schleberger
Keyword(s):  
Local Heating ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ambient Conditions ◽  
Kelvin Probe ◽  
Structural Modifications ◽  
Force Microscopy ◽  
Exfoliated Graphene ◽  
Atomic Force ◽  
P Type

ABSTRACTWe have employed atomic force and Kelvin-Probe force microscopy to study graphene sheets exfoliated on TiO2 under the influence of local heating achieved by laser irradiation. Exfoliation and irradiation took place under ambient conditions, the measurements were performed in ultra high vacuum. We show that after irradiation times of 6 min, an increase of the surface potential is observed which indicates a decrease of p-type carrier concentration. We attribute this effect to the removal of adsorbates like water and oxygen. After irradiation times of 12 min our topography images reveal severe structural modifications of graphene. These resemble the nanocrystallite network which form on graphene/SiO2 but after much longer irradiation times. From our results we propose that short laser heating at moderate powers might offer a way to clean graphene without inducing unwanted structural modifications.

Compositional Changes in Co–Ferritin Nanoparticles Induced by Ion Bombardment as Determined by Kelvin Probe Force Microscopy in High Vacuum

2008 ◽  
Vol 47 (7) ◽  
pp. 6160-6163 ◽  
Author(s):  
Shin-ichi Yamamoto ◽  
Hideki Yoshioka ◽  
Yukiharu Uraoka ◽  
Takashi Fuyuki ◽  
Mitsuhiro Okuda ◽  
...  
Keyword(s):  
High Vacuum ◽  
Ion Bombardment ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Compositional Changes

Change in Electric Field Distribution in Non-Reducing BaTiO3 Based-Dielectric Layer Loaded at High Temperature

2013 ◽  
Vol 566 ◽  
pp. 16-19
Author(s):  
Takafumi Okamoto ◽  
Akira Ando ◽  
Hiroshi Takagi
Keyword(s):  
Electric Field ◽  
Field Distribution ◽  
Electric Field Distribution ◽  
Intermediate Stage ◽  
Homogeneous Distribution ◽  
Hole Density ◽  
Kelvin Probe ◽  
Multilayer Ceramic Capacitors ◽  
Force Microscopy ◽  
Insulation Degradation

The electric field distributions in loaded dielectric layers of multilayer ceramic capacitors were investigated at several stages of insulation degradation for the load, using Kelvin probe force microscopy. The electric field distribution was found to be different at each stage of loaded time. Initially, the electric field was concentrated near the cathode, indicating that the insulation resistance near the anode decreased. Then, following the homogeneous distribution shown for an intermediate stage, the electric field eventually concentrated near the anode. This change indicates how insulation degradation occurs locally; this change can plausibly be explained by a hole density increase.

scholarly journals Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices

2015 ◽  
Vol 6 ◽  
pp. 2485-2497 ◽  
Author(s):  
Urs Gysin ◽  
Thilo Glatzel ◽  
Thomas Schmölzer ◽  
Adolf Schöner ◽  
Sergey Reshanov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electrostatic Force ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Scanning Probe ◽  
Electrostatic Force Microscopy ◽  
Kelvin Probe ◽  
Large Area ◽  
Force Microscopy ◽  
Probe Microscope

Background: The resolution in electrostatic force microscopy (EFM), a descendant of atomic force microscopy (AFM), has reached nanometre dimensions, necessary to investigate integrated circuits in modern electronic devices. However, the characterization of conducting or semiconducting power devices with EFM methods requires an accurate and reliable technique from the nanometre up to the micrometre scale. For high force sensitivity it is indispensable to operate the microscope under high to ultra-high vacuum (UHV) conditions to suppress viscous damping of the sensor. Furthermore, UHV environment allows for the analysis of clean surfaces under controlled environmental conditions. Because of these requirements we built a large area scanning probe microscope operating under UHV conditions at room temperature allowing to perform various electrical measurements, such as Kelvin probe force microscopy, scanning capacitance force microscopy, scanning spreading resistance microscopy, and also electrostatic force microscopy at higher harmonics. The instrument incorporates beside a standard beam deflection detection system a closed loop scanner with a scan range of 100 μm in lateral and 25 μm in vertical direction as well as an additional fibre optics. This enables the illumination of the tip–sample interface for optically excited measurements such as local surface photo voltage detection. Results: We present Kelvin probe force microscopy (KPFM) measurements before and after sputtering of a copper alloy with chromium grains used as electrical contact surface in ultra-high power switches. In addition, we discuss KPFM measurements on cross sections of cleaved silicon carbide structures: a calibration layer sample and a power rectifier. To demonstrate the benefit of surface photo voltage measurements, we analysed the contact potential difference of a silicon carbide p/n-junction under illumination.

High-sensitivity quantitative Kelvin probe microscopy by noncontact ultra-high-vacuum atomic force microscopy

1999 ◽  
Vol 75 (2) ◽  
pp. 286-288 ◽  
Author(s):  
Ch. Sommerhalter ◽  
Th. W. Matthes ◽  
Th. Glatzel ◽  
A. Jäger-Waldau ◽  
M. Ch. Lux-Steiner
Keyword(s):  
Atomic Force Microscopy ◽  
High Vacuum ◽  
High Sensitivity ◽  
Ultra High Vacuum ◽  
Kelvin Probe ◽  
Probe Microscopy ◽  
Kelvin Probe Microscopy ◽  
Force Microscopy ◽  
Atomic Force
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