scholarly journals 800 meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots

2013 ◽  
Vol 102 (5) ◽  
pp. 052115 ◽  
Author(s):  
T. Nowozin ◽  
L. Bonato ◽  
A. Högner ◽  
A. Wiengarten ◽  
D. Bimberg ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Localization Energy

scholarly journals Hole localization energy of 1.18 eV in GaSb quantum dots embedded in GaP (Phys. Status Solidi B 10/2016)

2016 ◽  
Vol 253 (10) ◽  
pp. 1869-1869
Author(s):  
Leo Bonato ◽  
Ismail Firat Arikan ◽  
Ludovic Desplanque ◽  
Christophe Coinon ◽  
Xavier Wallart ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Localization Energy ◽  
Hole Localization

GaSb quantum dots on GaAs with high localization energy of 710 meV and an emission wavelength of 1.3 µm

2014 ◽  
Vol 404 ◽  
pp. 48-53 ◽  
Author(s):  
Johannes Richter ◽  
Johannes Strassner ◽  
Thomas H. Loeber ◽  
Henning Fouckhardt ◽  
Tobias Nowozin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Emission Wavelength ◽  
Localization Energy

Hole localization energy of 1.18 eV in GaSb quantum dots embedded in GaP

2016 ◽  
Vol 253 (10) ◽  
pp. 1877-1881 ◽  
Author(s):  
Leo Bonato ◽  
Ismail Firat Arikan ◽  
Ludovic Desplanque ◽  
Christophe Coinon ◽  
Xavier Wallart ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Localization Energy ◽  
Hole Localization

scholarly journals 230 s room-temperature storage time and 1.14 eV hole localization energy in In0.5Ga0.5As quantum dots on a GaAs interlayer in GaP with an AlP barrier

2015 ◽  
Vol 106 (4) ◽  
pp. 042102 ◽  
Author(s):  
Leo Bonato ◽  
Elisa M. Sala ◽  
Gernot Stracke ◽  
Tobias Nowozin ◽  
André Strittmatter ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Storage Time ◽  
Room Temperature Storage ◽  
Localization Energy ◽  
Hole Localization ◽  
Temperature Storage

Nanostructure of semiconductor quantum dots in a borosilicate glass matrix by complementary use of HREM and AEM

1990 ◽  
Vol 48 (4) ◽  
pp. 728-729
Author(s):  
M.J. Kim ◽  
L.C. Liu ◽  
S.H. Risbud ◽  
R.W. Carpenter
Keyword(s):  
Quantum Dots ◽  
Borosilicate Glass ◽  
Glass Matrix ◽  
Optical Switching ◽  
Response Times ◽  
Fast Response ◽  
Processing Technique ◽  
Internal Stresses ◽  
Electron Hole ◽  
Spatial Dimensions

When the size of a semiconductor is reduced by an appropriate materials processing technique to a dimension less than about twice the radius of an exciton in the bulk crystal, the band like structure of the semiconductor gives way to discrete molecular orbital electronic states. Clusters of semiconductors in a size regime lower than 2R {where R is the exciton Bohr radius; e.g. 3 nm for CdS and 7.3 nm for CdTe) are called Quantum Dots (QD) because they confine optically excited electron- hole pairs (excitons) in all three spatial dimensions. Structures based on QD are of great interest because of fast response times and non-linearity in optical switching applications.In this paper we report the first HREM analysis of the size and structure of CdTe and CdS QD formed by precipitation from a modified borosilicate glass matrix. The glass melts were quenched by pouring on brass plates, and then annealed to relieve internal stresses. QD precipitate particles were formed during subsequent "striking" heat treatments above the glass crystallization temperature, which was determined by differential thermal analysis.

Attenuation of surface acoustic waves by quantum dots

1998 ◽  
Vol 77 (5) ◽  
pp. 1195-1202
Author(s):  
Andreas Knabchen Yehoshua, B. Levinson, Ora
Keyword(s):  
Quantum Dots ◽  
Acoustic Waves ◽  
Surface Acoustic Waves
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