Wide band gap nanocrystalline silicon carbide thin films prepared by ICP-CVD

2013 ◽  
Author(s):  
Debjit Kar ◽  
Debajyoti Das
Author(s):  
Raquel Caballero ◽  
Leonor de la Cueva ◽  
Andrea Ruiz-Perona ◽  
Yudenia Sánchez ◽  
Markus Neuschitzer ◽  
...  

2019 ◽  
Vol 11 (44) ◽  
pp. 41516-41522
Author(s):  
Hong Je Choi ◽  
Woosun Jang ◽  
Young Eun Kim ◽  
Aloysius Soon ◽  
Yong Soo Cho

2011 ◽  
Vol 679-680 ◽  
pp. 726-729 ◽  
Author(s):  
David T. Clark ◽  
Ewan P. Ramsay ◽  
A.E. Murphy ◽  
Dave A. Smith ◽  
Robin. F. Thompson ◽  
...  

The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits [1], potentially operating up to and beyond 450°C. This paper describes the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.


2010 ◽  
Vol 10 (3) ◽  
pp. S395-S398 ◽  
Author(s):  
Soon Il Jung ◽  
Kyung Hoon Yoon ◽  
Sejin Ahn ◽  
Jihye Gwak ◽  
Jae Ho Yun

2008 ◽  
Vol 516 (7) ◽  
pp. 1359-1364 ◽  
Author(s):  
E. Elangovan ◽  
A. Marques ◽  
A.S. Viana ◽  
R. Martins ◽  
E. Fortunato

2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Sung Hwan Moon ◽  
Se Jin Park ◽  
Yun Jeong Hwang ◽  
Doh-Kwon Lee ◽  
Yunae Cho ◽  
...  

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