scholarly journals Fermi velocity modulation in graphene by strain engineering

2013 ◽  
Author(s):  
Harihar Behera ◽  
Gautam Mukhopadhyay
Keyword(s):  
Strain Engineering ◽  
Fermi Velocity ◽  
Velocity Modulation

scholarly journals Tuning the Fano factor of graphene via Fermi velocity modulation

2018 ◽  
Vol 97 ◽  
pp. 105-110 ◽  
Author(s):  
Jonas R.F. Lima ◽  
Anderson L.R. Barbosa ◽  
C.G. Bezerra ◽  
Luiz Felipe C. Pereira
Keyword(s):  
Fano Factor ◽  
Fermi Velocity ◽  
Velocity Modulation

scholarly journals Perfect valley filter controlled by Fermi velocity modulation in graphene

Carbon ◽  
2020 ◽  
Vol 160 ◽  
pp. 353-360 ◽  
Author(s):  
A.R.S. Lins ◽  
Jonas R.F. Lima
Keyword(s):  
Fermi Velocity ◽  
Velocity Modulation

Fermi velocity modulation of spin-dependent transport in graphene

2015 ◽  
Vol 48 (35) ◽  
pp. 355304 ◽  
Author(s):  
Qing-Ping Wu ◽  
Zheng-Fang Liu ◽  
Ai-Xi Chen ◽  
Xian-Bo Xiao
Keyword(s):  
Fermi Velocity ◽  
Velocity Modulation ◽  
Spin Dependent Transport ◽  
Dependent Transport

Strain Engineering in 2D Materials: Towards Strain Tunable Optoelectronic Devices

2019 ◽  
Author(s):  
Andres Castellanos-Gomez ◽  
Patricia Gant ◽  
Riccardo Frisenda
Keyword(s):  
2D Materials ◽  
Optoelectronic Devices ◽  
Strain Engineering

Local Lattice Strain Measurement Using Geometric Phase Analysis of Dark Field Images from Scanning Transmission Electron Microscopy

2011 ◽  
Author(s):  
Jayhoon Chung ◽  
Guoda Lian ◽  
Lew Rabenberg
Keyword(s):  
Phase Analysis ◽  
Geometric Phase ◽  
Process Development ◽  
Local Strain ◽  
Strain Engineering ◽  
Dark Field ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Geometric Phase Analysis ◽  
Scanning Transmission

Abstract Since strain engineering plays a key role in semiconductor technology development, a reliable and reproducible technique to measure local strain in devices is necessary for process development and failure analysis. In this paper, geometric phase analysis of high angle annular dark field - scanning transmission electron microscope images is presented as an effective technique to measure local strains in the current node of Si based transistors.

scholarly journals Group Velocity Modulation and Light Field Focusing of the Edge States in Chirped Valley Graphene Plasmonic Metamaterials

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1808
Author(s):  
Liqiang Zhuo ◽  
Huiru He ◽  
Ruimin Huang ◽  
Shaojian Su ◽  
Zhili Lin ◽  
...  
Keyword(s):  
Group Velocity ◽  
Light Field ◽  
Slow Light ◽  
Dielectric Materials ◽  
Degree Of Freedom ◽  
Geometrical Parameters ◽  
Edge States ◽  
Velocity Modulation ◽  
Plasmonic Metamaterials ◽  
On Chip

The valley degree of freedom, like the spin degree of freedom in spintronics, is regarded as a new information carrier, promoting the emerging valley photonics. Although there exist topologically protected valley edge states which are immune to optical backscattering caused by defects and sharp edges at the inverse valley Hall phase interfaces composed of ordinary optical dielectric materials, the dispersion and the frequency range of the edge states cannot be tuned once the geometrical parameters of the materials are determined. In this paper, we propose a chirped valley graphene plasmonic metamaterial waveguide composed of the valley graphene plasmonic metamaterials (VGPMs) with regularly varying chemical potentials while keeping the geometrical parameters constant. Due to the excellent tunability of graphene, the proposed waveguide supports group velocity modulation and zero group velocity of the edge states, where the light field of different frequencies focuses at different specific locations. The proposed structures may find significant applications in the fields of slow light, micro–nano-optics, topological plasmonics, and on-chip light manipulation.

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