scholarly journals Effective mass of electron in monolayer graphene: Electron-phonon interaction

2013 ◽  
Vol 113 (4) ◽  
pp. 043708 ◽  
Author(s):  
E. Tiras ◽  
S. Ardali ◽  
T. Tiras ◽  
E. Arslan ◽  
S. Cakmakyapan ◽  
...  
2008 ◽  
Vol 22 (04) ◽  
pp. 365-379 ◽  
Author(s):  
S. MOHANTY ◽  
B. K. KALTA ◽  
P. NAYAK

It is a fact that for ordinary metals, the electron–phonon interaction increases the quasi-particle mass, which is in contrast to the finding by Fulde et al. that, for some heavy Fermion (HF) systems, it decreases. Some experiments on HF systems suggest that there exists a strong coupling of the elastic degrees of freedom with these at the electronic and magnetic ones. To understand the effect of electron–phonon interaction on effective mass, the electron–phonon coupling mechanism in the framework of the periodic Anderson model is considered, and a simple expression is derived. This involves various model parameters namely, the position of the 4f level; the effective coupling strength, g, temperature, b; and the electron–phonon coupling strength, r. The influence of these parameters on the value of effective mass is studied, and interesting results were found. For simplicity, the numerical calculation is performed in the long wavelength limit.


2016 ◽  
Vol 30 (15) ◽  
pp. 1650182
Author(s):  
Junhua Hou ◽  
Yunpeng Fan

The electron–phonon (e–p) interaction in three-dimensional (3D), two-dimensional (2D) and one-dimensional (1D) ternary mixed crystals is studied. The e–p interaction Hamiltonians including the unit cell volume variation in ternary mixed crystals are obtained by using the modified random-element-isodisplacement model and Born–Huang method. The polaronic self-trapping energy and renormalized effective mass of GaAs[Formula: see text]Sb[Formula: see text], GaP[Formula: see text]As[Formula: see text] and GaP[Formula: see text]Sb[Formula: see text] compounds are numerically calculated. It is confirmed theoretically that the nonlinear variation of the self-trapping energy and effective mass with the composition is essential and the unit cell volume effects cannot be neglected except the weak e–p coupling. The dimensional effect cannot also be ignored.


2004 ◽  
Vol 18 (22) ◽  
pp. 2991-2999 ◽  
Author(s):  
FENG-QI ZHAO ◽  
ZI-ZHENG GUO

The free polaron energy levels in finite GaAs / Al x Ga 1-x As parabolic quantum wells have been investigated by a modified variational method. The effect of the electric field, the electron-phonon interaction including the longitudinal optical phonons and the four branches of interface optical phonons, and the effect of spatial dependent effective mass have been considered in the calculation. The dependence of the energies of free polarons on the alloy composition x is given. The numerical results for finite GaAs / Al x Ga 1-x As parabolic quantum wells are obtained and discussed. The results show that the effect of the electric field and the interface optical phonons as well as the longitudinal optical phonons on the energy levels is obvious. One can find that the effect of the spatially dependent effective masses on the energy levels in finite parabolic quantum wells is considerable except for large well width. Thus, the electron-phonon interaction and the effect of the spatially dependent effective mass should not be neglected for the study of the electron state problem in finite parabolic quantum wells.


2005 ◽  
Vol 19 (05) ◽  
pp. 211-219 ◽  
Author(s):  
ZU-WEI YAN

A variational approach is used to study the intermediate-coupling polaron in bulk III-V nitride semiconductors with wurtzite crystal structure within the macroscopic dielectric continuum model and the uniaxial model. The polaronic self-trapping energy and effective mass are theoretically derived for the LO and TO polarizations mixing due to the anisotropy effect. The numerical computation has been performed for the polaronic self-trapping energy and effective mass for wurtzite nitrides GaN , AlN and InN . The results show that the self-trapping energies of the wurtzite nitrides are bigger than the zinc-blende structures above calculated materials. It is also found that the structure anisotropy increases the electron–phonon interaction in wurtizte nitride semiconductors. It indicates that the LO-like phonon influence on the polaronic effective mass and self-trapping energy are dominant and anisotropy effect is obvious.


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