Photolysis experiments on SiC mixed clusters: From silicon carbide clusters to silicon-doped fullerenes

1999 ◽  
Vol 110 (14) ◽  
pp. 6927-6938 ◽  
Author(s):  
M. Pellarin ◽  
C. Ray ◽  
J. Lermé ◽  
J. L. Vialle ◽  
M. Broyer ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Doped Fullerenes ◽  
Silicon Doped ◽  
Mixed Clusters

scholarly journals Structural and thermal properties of silicon-doped fullerenes

2003 ◽  
Vol 119 (2) ◽  
pp. 1127-1135 ◽  
Author(s):  
P. A. Marcos ◽  
J. A. Alonso ◽  
L. M. Molina ◽  
A. Rubio ◽  
M. J. López
Keyword(s):  
Thermal Properties ◽  
Doped Fullerenes ◽  
Silicon Doped

Atomic Scale Modelling of Materials: A Prerequisite for any Multi-Scale Approach to Structural and Dynamical Properties

2008 ◽  
Vol 139 ◽  
pp. 141-150
Author(s):  
Masahiko Matsubara ◽  
Massimo Celino ◽  
Philip S. Salmon ◽  
Carlo Massobrio
Keyword(s):  
Disordered Systems ◽  
Density Functional ◽  
Structural Features ◽  
Atomic Scale ◽  
Temperature Evolution ◽  
Doped Fullerenes ◽  
Scale Modelling ◽  
Quantitative Basis ◽  
Silicon Doped ◽  
The Stability

We describe two examples of application focusing on first-principles molecular dynamics as an effective tool to unravel the atomic-scale structure of condensed-matter systems. The first application is on disordered network-forming materials and the second is on silicon-doped fullerenes. We show that an accurate modelling of interatomic forces based on density functional theory, when combined with an account of the temperature evolution, is an unavoidable prerequisite for analyzing and interpreting experimental results on a quantitative basis. In the case of disordered systems, we describe the basic structural features of amorphous GeSe4 and highlight the predominant chemical order in this system. The effect of adding or removing an electron charge on the stability of Si-doped fullerenes is exemplified by considering the finite temperature evolution of heterofullerenes.

First principles calculation study of multi-silicon doped fullerenes

2005 ◽  
Vol 33 (1-3) ◽  
pp. 237-243 ◽  
Author(s):  
Masahiko Matsubara ◽  
Carlo Massobrio ◽  
Jean-Claude Parlebas
Keyword(s):  
First Principles ◽  
First Principles Calculation ◽  
Doped Fullerenes ◽  
Silicon Doped

scholarly journals Molecular dynamics study of the fragmentation of silicon-doped fullerenes

2002 ◽  
Vol 66 (4) ◽  
Author(s):  
Chu-Chun Fu ◽  
Javier Fava ◽  
Ruben Weht ◽  
M. Weissmann
Keyword(s):  
Molecular Dynamics ◽  
Doped Fullerenes ◽  
Silicon Doped

Irradiation behavior of pyrolytic silicon carbide

1983 ◽  
Vol 41 ◽  
pp. 72-73
Author(s):  
R. J. Lauf
Keyword(s):  
Silicon Carbide ◽  
Fission Products ◽  
Thermodynamics And Kinetics ◽  
Neutron Fluences ◽  
Fuel Particles ◽  
Sic Coatings ◽  
Irradiation Behavior ◽  
Kinetics Of ◽  
Htgr Fuel

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain a layer of pyrolytic silicon carbide to act as a miniature pressure vessel and primary fission product barrier. Optimization of the SiC with respect to fuel performance involves four areas of study: (a) characterization of as-deposited SiC coatings; (b) thermodynamics and kinetics of chemical reactions between SiC and fission products; (c) irradiation behavior of SiC in the absence of fission products; and (d) combined effects of irradiation and fission products. This paper reports the behavior of SiC deposited on inert microspheres and irradiated to fast neutron fluences typical of HTGR fuel at end-of-life.

Microstructural Evaluation of Silicon Carbide Whisker Reinforced Alumina Fabricated with Carbon-Coated Whiskers

1991 ◽  
Vol 49 ◽  
pp. 920-921
Author(s):  
K. B. Alexander ◽  
P. F. Becher
Keyword(s):  
Silicon Carbide ◽  
High Resolution Electron Microscopy ◽  
Ceramic Composites ◽  
Interface Debonding ◽  
Resolution Electron ◽  
Microstructural Evaluation ◽  
Carbon Coated ◽  
Electron Energy Loss ◽  
Interfacial Films ◽  
Debonding Process

The presence of interfacial films at the whisker-matrix interface can significantly influence the fracture toughness of ceramic composites. The film may alter the interface debonding process though changes in either the interfacial fracture energy or the residual stress at the interface. In addition, the films may affect the whisker pullout process through the frictional sliding coefficients or the extent of mechanical interlocking of the interface due to the whisker surface topography.Composites containing ACMC silicon carbide whiskers (SiCw) which had been coated with 5-10 nm of carbon and Tokai whiskers coated with 2 nm of carbon have been examined. High resolution electron microscopy (HREM) images of the interface were obtained with a JEOL 4000EX electron microscope. The whisker geometry used for HREM imaging is described in Reference 2. High spatial resolution (< 2-nm-diameter probe) parallel-collection electron energy loss spectroscopy (PEELS) measurements were obtained with a Philips EM400T/FEG microscope equipped with a Gatan Model 666 spectrometer.

TEM of grain growth and phase transformations during creep of SCS-6 silicon carbide fibers

1995 ◽  
Vol 53 ◽  
pp. 350-351
Author(s):  
L. A. Giannuzzi ◽  
C. A. Lewinsohn ◽  
C. E. Bakis ◽  
R. E. Tressler
Keyword(s):  
Silicon Carbide ◽  
Creep Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Primary Creep ◽  
Excess Carbon ◽  
Silicon Carbide Fibers ◽  
Sic Fiber ◽  
Carbon Core ◽  
Grain Width

The SCS-6 SiC fiber is a 142 μm diameter fiber consisting of four distinct regions of βSiC. These SiC regions vary in excess carbon content ranging from 10 a/o down to 5 a/o in the SiC1 through SiC3 region. The SiC4 region is stoichiometric. The SiC sub-grains in all regions grow radially outward from the carbon core of the fiber during the chemical vapor deposition processing of these fibers. In general, the sub-grain width changes from 50nm to 250nm while maintaining an aspect ratio of ~10:1 from the SiC1 through the SiC4 regions. In addition, the SiC shows a <110> texture, i.e., the {111} planes lie ±15° along the fiber axes. Previous has shown that the SCS-6 fiber (as well as the SCS-9 and the developmental SCS-50 μm fiber) undergoes primary creep (i.e., the creep rate constantly decreases as a function of time) throughout the lifetime of the creep test.

Persistent photoconductivity in uniforndy and selectively silicon doped AlAs / GaAs short period superlattices

1991 ◽  
Vol 1 (4) ◽  
pp. 503-510 ◽  
Author(s):  
P. Jeanjean ◽  
J. Sicart ◽  
J. L. Robert ◽  
F. Mollot ◽  
R. Planel
Keyword(s):  
Persistent Photoconductivity ◽  
Short Period ◽  
Short Period Superlattices ◽  
Silicon Doped

LASER INDUCED ORDERING AND DEFECTS IN ION-IMPLANTED HEXAGONAL SILICON CARBIDE

1980 ◽  
Vol 41 (C4) ◽  
pp. C4-111-C4-112 ◽  
Author(s):  
V. V. Makarov ◽  
T. Tuomi ◽  
K. Naukkarinen ◽  
M. Luomajärvi ◽  
M. Riihonen
Keyword(s):  
Silicon Carbide ◽  
Ion Implanted
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