The effective g-factor in In0.53Ga0.47As/In0.52Al0.48As quantum well investigated by magnetotransport measurement

2013 ◽  
Vol 113 (3) ◽  
pp. 033704 ◽  
Author(s):  
X. Z. Liu ◽  
Y. G. Xu ◽  
G. Yu ◽  
L. M. Wei ◽  
T. Lin ◽  
...  
Keyword(s):  
Quantum Well ◽  
G Factor ◽  
Magnetotransport Measurement

Determination of g-factor in a quantum well channel with a strong Rashba effect

2014 ◽  
Vol 115 (17) ◽  
pp. 17C702 ◽  
Author(s):  
Won Young Choi ◽  
Joonyeon Chang ◽  
Jung Hoon Lee ◽  
Hyun Cheol Koo
Keyword(s):  
Quantum Well ◽  
Rashba Effect ◽  
G Factor

Exchange Enhancement of g-Factor in Narrow-Gap InAs/AlSb Quantum Well Heterostructures

2012 ◽  
Vol 190 ◽  
pp. 554-557 ◽  
Author(s):  
S.S. Krishtopenko ◽  
V.I. Gavrilenko ◽  
M. Goiran
Keyword(s):  
Quantum Well ◽  
Landau Level ◽  
Electron Gas ◽  
Semiconductor Heterostructures ◽  
Electron Interaction ◽  
Narrow Gap ◽  
G Factor ◽  
2D Electron Gas ◽  
Level Width ◽  
Exchange Enhancement

We report on the study of exchange enhancement of g-factor in 2D electron gas in n-type narrow-gap semiconductor heterostructures that feature a strong nonparabolicity of electric subbands. We demonstrate that exchange g-factor enhancement not only shows maxima at odd values of Landau level filling factors but, due to subband nonparabolicity, persists at even filling factor values as well. The magnitude of the exchange enhancement, the amplitude and shape of the g-factor oscillations are governed by both the screening of electron-electron interaction and the Landau level width. The enhanced g-factor values calculated for 2D electron gas in InAs/AlSb quantum well heterostructures are compared with previous experimental magnetotransport data.

g-factor anisotropy in a GaAs/AlxGa1−xAs quantum well probed by electron spin resonance

2011 ◽  
Vol 83 (4) ◽  
Author(s):  
Yu. A. Nefyodov ◽  
A. V. Shchepetilnikov ◽  
I. V. Kukushkin ◽  
W. Dietsche ◽  
S. Schmult
Keyword(s):  
Electron Spin Resonance ◽  
Quantum Well ◽  
Electron Spin ◽  
G Factor ◽  
Spin Resonance

Design and fabrication of a SiGe double quantum well structure for g-factor tuning

2006 ◽  
Vol 39 (5) ◽  
pp. 414-420 ◽  
Author(s):  
H. Malissa ◽  
D. Gruber ◽  
D. Pachinger ◽  
F. Schäffler ◽  
W. Jantsch ◽  
...  
Keyword(s):  
Quantum Well ◽  
Double Quantum ◽  
G Factor ◽  
Quantum Well Structure ◽  
Double Quantum Well

A problem of the effective g-factor in the n-HgTe∕Cd[sub x]Hg[sub 1−x]Te quantum well with inverted band structure

2011 ◽  
Author(s):  
M. V. Yakunin ◽  
A. V. Suslov ◽  
S. M. Podgornykh ◽  
S. A. Dvoretsky ◽  
N. N. Mikhailov ◽  
...  
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
G Factor

Type-I-Type-II Hybrid Quantum Well With Tunable Hole g-factor

2011 ◽  
Author(s):  
P. Moon ◽  
J. D. Lee ◽  
W. J. Choi ◽  
Jisoon Ihm ◽  
Hyeonsik Cheong
Keyword(s):  
Quantum Well ◽  
Type I ◽  
Type Ii ◽  
G Factor

scholarly journals Effective g-factor in high-mobility InGaAs/InP Quantum well

2012 ◽  
Vol 61 (12) ◽  
pp. 127102
Author(s):  
Wei Lai-Ming ◽  
Zhou Yuan-Ming ◽  
Yu Guo-Lin ◽  
Gao Kuang-Hong ◽  
Liu Xin-Zhi ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Mobility ◽  
G Factor

scholarly journals Эффективная масса и g-фактор электронов в широких квантовых ямах теллурида ртути -=SUP=-*-=/SUP=-

2018 ◽  
Vol 52 (1) ◽  
pp. 16
Author(s):  
С.В. Гудина ◽  
В.Н. Неверов ◽  
Е.В. Ильченко ◽  
А.С. Боголюбский ◽  
Г.И. Харус ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Activation Energy ◽  
Activation Analysis ◽  
Quantum Well ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Landau Levels ◽  
G Factor ◽  
Temperature Dependences ◽  
Longitudinal Resistance

AbstractThe magnetic-field (0 T < B < 9 T) dependence of the longitudinal and Hall resistances at fixed temperatures (2 K < T < 50 K) for the HgCdTe/HgTe/HgCdTe system with a HgTe quantum well 20.3 nm in width are measured. The activation analysis of the magnetoresistance curves is used as a tool for identifying the mobility gaps between neighboring Landau levels. The activation-energy values obtained from the temperature dependences of the longitudinal resistance in the plateau regions of the quantum Hall effect with the filling factors ν = 1, 2, 3 make it possible to estimate the effective mass and the g factor of electrons in the system under study. Indications concerning the possibility of large values of the g factor (≅ 80) are obtained.

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