Electron mobility of ultrathin InN on yttria-stabilized zirconia with two-dimensionally grown initial layers

2013 ◽  
Vol 102 (2) ◽  
pp. 022103 ◽  
Author(s):  
Kana Okubo ◽  
Atsushi Kobayashi ◽  
Jitsuo Ohta ◽  
Masaharu Oshima ◽  
Hiroshi Fujioka
Keyword(s):  
Electron Mobility ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Initial Layers

High Electron Mobility W-doped In2O3 Thin Films

2005 ◽  
Vol 905 ◽  
Author(s):  
Paul F. Newhouse ◽  
Cheol-Hee Park ◽  
Douglas A. Keszler ◽  
Janet Tate ◽  
Peter S. Nyholm
Keyword(s):  
Thin Films ◽  
Electron Mobility ◽  
Room Temperature ◽  
Dopant Concentration ◽  
Pulsed Laser ◽  
Yttria Stabilized Zirconia ◽  
Laser Deposition ◽  
High Electron ◽  
Stabilized Zirconia ◽  
High Electron Mobility

AbstractHigh electron mobility thin films of In2−xWxO3+d (0 ≤ × ≤ 0.075) were prepared by pulsed laser deposition. The highest mobility polycrystalline and textured films show mobility >110 cm2/Vs on both amorphous SiO2 and single crystal yttria-stabilized zirconia substrates. The carrier density is in the range 1−3 × 1020 cm−3 at room temperature. The W dopant concentration for films with optimized electrical properties was x ∼ 0.03.

Microstructural examination of modified yttria stabilized zirconia by EM analytical techniques

1986 ◽  
Vol 44 ◽  
pp. 842-843
Author(s):  
W. W. Davison ◽  
R. C. Buchanan
Keyword(s):  
Mechanical Properties ◽  
Analytical Techniques ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Transmission Microscopy ◽  
Sintering Aid ◽  
Densification Temperature ◽  
Chemical Inertness ◽  
Scanning Transmission ◽  
Microstructural Examination

Yttria stabilized zirconia (YSZ) has become a significant technological material due to its high ionic conductivity, chemical inertness, and good mechanical properties. Temperatures on the order of 1700°C are required, however, to densify YSZ to the degree necessary for good electrical and mechanical properties. A technique for lowering the densification temperature is the addition of small amounts of material which facilitate the formation of a liquid phase at comparatively low temperatures. In this study, sintered microstructures obtained from the use of Al2O3 as a sintering aid were examined with scanning, transmission, and scanning transmission microscopy (SEM, TEM, and STEM).

Characterizations of Synthetic 8mol% YSZ with Comparison to 3mol %YSZ for HT-SOFC

2020 ◽  
Vol 38 (4A) ◽  
pp. 491-500
Author(s):  
Abeer F. Al-Attar ◽  
Saad B. H. Farid ◽  
Fadhil A. Hashim
Keyword(s):  
Ionic Conductivity ◽  
Electrochemical Impedance ◽  
Structural Information ◽  
Impedance Analysis ◽  
High Energy ◽  
Yttria Stabilized Zirconia ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
Powder Morphology ◽  
X Ray

In this work, Yttria (Y2O3) was successfully doped into tetragonal 3mol% yttria stabilized Zirconia (3YSZ) by high energy-mechanical milling to synthesize 8mol% yttria stabilized Zirconia (8YSZ) used as an electrolyte for high temperature solid oxide fuel cells (HT-SOFC). This work aims to evaluate the densification and ionic conductivity of the sintered electrolytes at 1650°C. The bulk density was measured according to ASTM C373-17. The powder morphology and the microstructure of the sintered electrolytes were analyzed via Field Emission Scanning Electron Microscopy (FESEM). The chemical analysis was obtained with Energy-dispersive X-ray spectroscopy (EDS). Also, X-ray diffraction (XRD) was used to obtain structural information of the starting materials and the sintered electrolytes. The ionic conductivity was obtained through electrochemical impedance spectroscopy (EIS) in the air as a function of temperatures at a frequency range of 100(mHz)-100(kHz). It is found that the 3YSZ has a higher density than the 8YSZ. The impedance analysis showed that the ionic conductivity of the prepared 8YSZ at 800°C is0.906 (S.cm) and it was 0.214(S.cm) of the 3YSZ. Besides, 8YSZ has a lower activation energy 0.774(eV) than that of the 3YSZ 0.901(eV). Thus, the prepared 8YSZ can be nominated as an electrolyte for the HT-SOFC.

Spectroscopic investigation of the electronic structure of yttria-stabilized zirconia

2018 ◽  
Vol 2 (3) ◽  
Author(s):  
Thomas Götsch ◽  
Erminald Bertel ◽  
Alexander Menzel ◽  
Michael Stöger-Pollach ◽  
Simon Penner
Keyword(s):  
Electronic Structure ◽  
Spectroscopic Investigation ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia

scholarly journals Influence of Preaging Temperature on the Indentation Strength of 3Y-TZP Aged in Ambient Atmosphere

Materials ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 2767
Author(s):  
Ki-Won Jeong ◽  
Jung-Suk Han ◽  
Gi-Uk Yang ◽  
Dae-Joon Kim
Keyword(s):  
Residual Stress ◽  
Phase Transformation ◽  
Low Temperature ◽  
Compressive Residual Stress ◽  
Yttria Stabilized Zirconia ◽  
Ambient Atmosphere ◽  
Aged Specimen ◽  
Stabilized Zirconia ◽  
M Phase ◽  
The Relationship

Yttria-stabilized zirconia (3Y-TZP) containing 0.25% Al2O3, which is resistant to low temperature degradation (LTD), was aged for 10 h at 130–220 °C in air. The aged specimens were subsequently indented at loads ranging from 9.8 to 490 N using a Vickers indenter. The influence of preaging temperature on the biaxial strength of the specimens was investigated to elucidate the relationship between the extent of LTD and the strength of zirconia restorations that underwent LTD. The indented strength of the specimens increased as the preaging temperature was increased higher than 160 °C, which was accompanied by extensive t-ZrO2 (t) to m-ZrO2 (m) and c-ZrO2 (c) to r-ZrO2 (r) phase transformations. The influence of preaging temperature on the indented strength was rationalized by the residual stresses raised by the t→m transformation and the reversal of tensile residual stress on the aged specimen surface due to the indentation. The results suggested that the longevity of restorations would not be deteriorated if the aged restorations retain compressive residual stress on the surface, which corresponds to the extent of t→m phase transformation less than 52% in ambient environment.

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