Efficient n-type doping of Si nanocrystals embedded in SiO2 by ion beam synthesis

2013 ◽  
Vol 102 (1) ◽  
pp. 013116 ◽  
Author(s):  
Rim Khelifi ◽  
Daniel Mathiot ◽  
Raghav Gupta ◽  
Dominique Muller ◽  
Manuel Roussel ◽  
...  
Keyword(s):  
Ion Beam ◽  
Si Nanocrystals ◽  
Ion Beam Synthesis

scholarly journals Size and location control of Si nanocrystals at ion beam synthesis in thin SiO2 films

2002 ◽  
Vol 81 (16) ◽  
pp. 3049-3051 ◽  
Author(s):  
Torsten Müller ◽  
Karl-Heinz Heinig ◽  
Wolfhard Möller
Keyword(s):  
Ion Beam ◽  
Sio2 Films ◽  
Si Nanocrystals ◽  
Ion Beam Synthesis

scholarly journals Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis

2003 ◽  
Vol 83 (1) ◽  
pp. 168-170 ◽  
Author(s):  
P. Normand ◽  
E. Kapetanakis ◽  
P. Dimitrakis ◽  
D. Tsoukalas ◽  
K. Beltsios ◽  
...  
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Si Nanocrystals ◽  
Ion Beam Synthesis

Optical amplification studies in Si nanocrystals-based waveguides prepared by ion-beam synthesis

2009 ◽  
Vol 41 (6) ◽  
pp. 1044-1047 ◽  
Author(s):  
Y. Lebour ◽  
D. Navarro-Urrios ◽  
P. Pellegrino ◽  
G. Sarrabayrouse ◽  
L. Pavesi ◽  
...  
Keyword(s):  
Ion Beam ◽  
Optical Amplification ◽  
Si Nanocrystals ◽  
Ion Beam Synthesis

Oxide-nitride-oxide Dielectric Stacks with Embedded Si-nanoparticles Fabricated by Low-energy Ion-beam-synthesis

2007 ◽  
Vol 997 ◽  
Author(s):  
Vassilis Ioannou-Sougleridis ◽  
Panagiotis Dimitrakis ◽  
Vassilios Em. Vamvakas ◽  
Pascal Normand ◽  
Caroline Bonafos ◽  
...  
Keyword(s):  
Ion Beam ◽  
Synthesis Method ◽  
Electrical Characterization ◽  
Charge Trapping ◽  
Differential Resistance ◽  
Low Energy ◽  
Si Nanocrystals ◽  
Ion Beam Synthesis ◽  
Nitride Layers ◽  
Nitride Oxide

AbstractThis work reports on the formation of Si-nanocrystals within silicon nitride layers by low-energy Si ion implantation. Electrical characterization of oxide/Si-nanocrystal-nitride/oxide dielectric stacks demonstrates regions of negative differential resistance at low-fields. In addition, the memory characteristics in terms of charge trapping, write/erase response and retention properties of the dielectric stacks were recorded. The results indicate the large potential of the low-energy ion beam synthesis method in nitride memory technology.

Ion beam synthesis of undoped and Er-doped Si nanocrystals

2001 ◽  
Vol 175-177 ◽  
pp. 140-147 ◽  
Author(s):  
G Franzò ◽  
E.C Moreira ◽  
D Pacifici ◽  
F Priolo ◽  
F Iacona ◽  
...  
Keyword(s):  
Ion Beam ◽  
Si Nanocrystals ◽  
Ion Beam Synthesis ◽  
Er Doped

Ion beam synthesis of Si nanocrystals in silicon dioxide and sapphire matrices—the photoluminescence study

Vacuum ◽  
2005 ◽  
Vol 78 (2-4) ◽  
pp. 519-524 ◽  
Author(s):  
D.I. Tetelbaum ◽  
A.N. Mikhaylov ◽  
O.N. Gorshkov ◽  
A.P. Kasatkin ◽  
A.I. Belov ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Ion Beam ◽  
Photoluminescence Study ◽  
Si Nanocrystals ◽  
Ion Beam Synthesis

Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications

2005 ◽  
Vol 49 (11) ◽  
pp. 1734-1744 ◽  
Author(s):  
C. Bonafos ◽  
H. Coffin ◽  
S. Schamm ◽  
N. Cherkashin ◽  
G. Ben Assayag ◽  
...  
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Si Nanocrystals ◽  
Ion Beam Synthesis ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

Formation of Luminescent Si Nanocrystals by High-Temperature Annealing of Ion-Beam-Sputtered Si/SiO2 Multilayers

2003 ◽  
Vol 775 ◽  
Author(s):  
Suk-Ho Choi ◽  
Jun Sung Bae ◽  
Kyung Jung Kim ◽  
Dae Won Moon
Keyword(s):  
Quantum Confinement ◽  
Radiative Recombination ◽  
Ion Beam ◽  
Quantum Confinement Effect ◽  
Visible Range ◽  
Ion Beam Sputtering ◽  
Transmission Electron ◽  
Si Nanocrystals ◽  
Beam Sputtering ◽  
Microscopy Images

AbstractSi/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high resolution transmission electron microscopy images clearly demonstrate the existence of Si nanocrystals, which exhibit photoluminescence (PL) in the visible range when TS is ≥ 300°C. This is attributed to well-separation of nanocrystals in the higher-TS samples, which is thought to be a major cause for reducing non-radiative recombination in the interface between Si nanocrystal and surface oxide. The visible PL spectra are enhanced in its intensity and are shifted to higher energy by increasing TS. These PL behaviours are consistent with the quantum confinement effect of Si nanocrystals.

Ion beam synthesis of Au nanoparticles embedded nano-composite glass

2013 ◽  
Author(s):  
Ranjana S. Varma ◽  
D. C. Kothari ◽  
Ravi Kumar ◽  
P. Kumar ◽  
S. S. Santra ◽  
...  
Keyword(s):  
Au Nanoparticles ◽  
Ion Beam ◽  
Nano Composite ◽  
Ion Beam Synthesis ◽  
Composite Glass
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