Local ultra-violet surface photovoltage spectroscopy of single thread dislocations in gallium nitrides by Kelvin probe force microscopy

2012 ◽  
Vol 101 (25) ◽  
pp. 252107 ◽  
Keyword(s):  
Ultra Violet ◽  
Kelvin Probe Force Microscopy ◽  
Surface Photovoltage ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Surface Photovoltage Spectroscopy ◽  
Single Thread ◽  
Gallium Nitrides

FM demodulated Kelvin probe force microscopy for surface photovoltage tracking

2005 ◽  
Vol 16 (3) ◽  
pp. S1-S6 ◽  
Author(s):  
Christian Loppacher ◽  
Ulrich Zerweck ◽  
Sebastian Teich ◽  
Elke Beyreuther ◽  
Tobias Otto ◽  
...  
Keyword(s):  
Kelvin Probe Force Microscopy ◽  
Surface Photovoltage ◽  
Kelvin Probe ◽  
Force Microscopy

scholarly journals Nanoscale Surface Photovoltage Mapping of 2D Materials and Heterostructures by Illuminated Kelvin Probe Force Microscopy

2018 ◽  
Vol 122 (25) ◽  
pp. 13564-13571 ◽  
Author(s):  
Melinda J. Shearer ◽  
Ming-Yang Li ◽  
Lain-Jong Li ◽  
Song Jin ◽  
Robert J. Hamers
Keyword(s):  
2D Materials ◽  
Kelvin Probe Force Microscopy ◽  
Surface Photovoltage ◽  
Kelvin Probe ◽  
Force Microscopy

scholarly journals Junction formation of Cu3BiS3 investigated by Kelvin probe force microscopy and surface photovoltage measurements

2012 ◽  
Vol 3 ◽  
pp. 277-284 ◽  
Author(s):  
Fredy Mesa ◽  
William Chamorro ◽  
William Vallejo ◽  
Robert Baier ◽  
Thomas Dittrich ◽  
...  
Keyword(s):  
Band Gap ◽  
Buffer Layer ◽  
Kelvin Probe Force Microscopy ◽  
Buffer Layers ◽  
Surface Photovoltage ◽  
Excitation Wavelength ◽  
Kelvin Probe ◽  
Band Bending ◽  
Force Microscopy ◽  
Junction Formation

Recently, the compound semiconductor Cu3BiS3 has been demonstrated to have a band gap of ~1.4 eV, well suited for photovoltaic energy harvesting. The preparation of polycrystalline thin films was successfully realized and now the junction formation to the n-type window needs to be developed. We present an investigation of the Cu3BiS3 absorber layer and the junction formation with CdS, ZnS and In2S3 buffer layers. Kelvin probe force microscopy shows the granular structure of the buffer layers with small grains of 20–100 nm, and a considerably smaller work-function distribution for In2S3 compared to that of CdS and ZnS. For In2S3 and CdS buffer layers the KPFM experiments indicate negatively charged Cu3BiS3 grain boundaries resulting from the deposition of the buffer layer. Macroscopic measurements of the surface photovoltage at variable excitation wavelength indicate the influence of defect states below the band gap on charge separation and a surface-defect passivation by the In2S3 buffer layer. Our findings indicate that Cu3BiS3 may become an interesting absorber material for thin-film solar cells; however, for photovoltaic application the band bending at the charge-selective contact has to be increased.

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