Observation of 200th harmonic with fractional linewidth of 10−10 in a microwave frequency comb generated in a tunneling junction

2012 ◽  
Vol 101 (24) ◽  
pp. 241102 ◽  
Author(s):  
Mark J. Hagmann ◽  
Antoinette J. Taylor ◽  
Dmitry A. Yarotski
Keyword(s):  
Frequency Comb ◽  
Microwave Frequency ◽  
Tunneling Junction

Microwave frequency-comb generation in a tunneling junction by intermode mixing of ultrafast laser pulses

2011 ◽  
Vol 99 (1) ◽  
pp. 011112 ◽  
Author(s):  
Mark J. Hagmann ◽  
Anatoly Efimov ◽  
Antoinette J. Taylor ◽  
Dzmitry A. Yarotski
Keyword(s):  
Frequency Comb ◽  
Microwave Frequency ◽  
Laser Pulses ◽  
Ultrafast Laser ◽  
Tunneling Junction ◽  
Ultrafast Laser Pulses ◽  
Comb Generation

Microwave Frequency Comb from a Semiconductor in a Scanning Tunneling Microscope

2016 ◽  
Vol 23 (2) ◽  
pp. 443-448 ◽  
Author(s):  
Mark J. Hagmann ◽  
Dmitry A. Yarotski ◽  
Marwan S. Mousa
Keyword(s):  
Scanning Tunneling Microscope ◽  
Frequency Comb ◽  
Pulse Repetition Frequency ◽  
Tunneling Current ◽  
Microwave Frequency ◽  
Scanning Tunneling ◽  
Bandgap Energy ◽  
Tunneling Junction ◽  
Spreading Resistance ◽  
Tunneling Microscope

AbstractQuasi-periodic excitation of the tunneling junction in a scanning tunneling microscope, by a mode-locked ultrafast laser, superimposes a regular sequence of 15 fs pulses on the DC tunneling current. In the frequency domain, this is a frequency comb with harmonics at integer multiples of the laser pulse repetition frequency. With a gold sample the 200th harmonic at 14.85 GHz has a signal-to-noise ratio of 25 dB, and the power at each harmonic varies inversely with the square of the frequency. Now we report the first measurements with a semiconductor where the laser photon energy must be less than the bandgap energy of the semiconductor; the microwave frequency comb must be measured within 200 μm of the tunneling junction; and the microwave power is 25 dB below that with a metal sample and falls off more rapidly at the higher harmonics. Our results suggest that the measured attenuation of the microwave harmonics is sensitive to the semiconductor spreading resistance within 1 nm of the tunneling junction. This approach may enable sub-nanometer carrier profiling of semiconductors without requiring the diamond nanoprobes in scanning spreading resistance microscopy.

Optical generation of a precise microwave frequency comb by harmonic frequency locking

2007 ◽  
Vol 32 (13) ◽  
pp. 1917 ◽  
Author(s):  
Sze-Chun Chan ◽  
Guang-Qiong Xia ◽  
Jia-Ming Liu
Keyword(s):  
Frequency Comb ◽  
Microwave Frequency ◽  
Harmonic Frequency ◽  
Frequency Locking ◽  
Optical Generation

scholarly journals Ka-band Microwave Frequency Comb Doppler Reflectometer System for the Large Helical Device

2014 ◽  
Vol 9 (0) ◽  
pp. 1402149-1402149 ◽  
Author(s):  
Tokihiko TOKUZAWA ◽  
Shigeru INAGAKI ◽  
Akira EJIRI ◽  
Ryota SOGA ◽  
Ichihiro YAMADA ◽  
...  
Keyword(s):  
Frequency Comb ◽  
Microwave Frequency

scholarly journals Optical frequency comb based multi-band microwave frequency conversion for satellite applications

2014 ◽  
Vol 22 (1) ◽  
pp. 869 ◽  
Author(s):  
Xinwu Yang ◽  
Kun Xu ◽  
Jie Yin ◽  
Yitang Dai ◽  
Feifei Yin ◽  
...  
Keyword(s):  
Frequency Conversion ◽  
Frequency Comb ◽  
Microwave Frequency ◽  
Optical Frequency Comb ◽  
Optical Frequency ◽  
Satellite Applications ◽  
Multi Band
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