Low-frequency noise in gallium nitride nanowire mechanical resonators

2012 ◽  
Vol 101 (23) ◽  
pp. 233115 ◽  
Author(s):  
Jason M. Gray ◽  
Kris A. Bertness ◽  
Norman A. Sanford ◽  
Charles T. Rogers
Keyword(s):  
Gallium Nitride ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Mechanical Resonators

The Effect of Indium Surfactant on the Optoelectronic and Structural Properties of MBE Grown Gallium Nitride

2000 ◽  
Vol 618 ◽  
Author(s):  
C.F. Zhu ◽  
W.K. Fong ◽  
B.H. Leung ◽  
C.C. Cheng ◽  
C. Surya ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Power Spectra ◽  
Low Frequency ◽  
Rf Plasma ◽  
Frequency Noise ◽  
Noise Power ◽  
Low Frequency Noise ◽  
X Ray Diffraction ◽  
X Ray ◽  
The One

ABSTRACTGallium nitride films were grown by rf-plasma assisted molecular beam epitaxy. A small indium flux was used as surfactant during the growth. The optical and electrical properties of the films grown with and without In surfactant were characterized by investigating the photoluminescence (PL), high resolution x-ray diffraction (HRXRD) and low-frequency noise power spectra. The sample grown in the presence of In surfactant showed a suppressed yellow luminescence (YL) compared to the one grown without In surfactant. Significant reduction in the full width at half maximum of the GaN (0002) x-ray diffraction peak, indicating a better film quality, was obtained when In surfactant was used during growth. Atomic force microscopy studies show that the root mean squared surface roughness for films grown with and without the In surfactant are 5.86 and 6.99 nm respectively indicating significant improvement in surface morphology. This is attributed to the enhanced 2-dimensional growth by In surfactant. A smaller Hooge parameter was obtained from the low-frequency noise measurement for the sample grown with In surfactant indicating that application of In surfactant led to significant reduction in the trap density of the material.

LOW FREQUENCY NOISE IN GALLIUM NITRIDE FIELD EFFECT TRANSISTORS

2003 ◽  
Author(s):  
SERGEY L. RUMYANTSEV ◽  
MICHAEL S. SHUR ◽  
REMIS GASKA ◽  
MICHAEL. E. LEVINSHTEIN ◽  
M. ASIF KHAN ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise

Low-frequency noise in gallium nitride epitaxial layers with different degrees of order of mosaic structure

2004 ◽  
Vol 38 (9) ◽  
pp. 998-1000
Author(s):  
N. M. Shmidt ◽  
M. E. Levinshtein ◽  
W. V. Lundin ◽  
A. I. Besyul’kin ◽  
P. S. Kop’ev ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Low Frequency ◽  
Mosaic Structure ◽  
Epitaxial Layers ◽  
Frequency Noise ◽  
Low Frequency Noise

Low Frequency Noise In n-Type Gallium Nitride

1998 ◽  
Vol 512 ◽  
Author(s):  
N. Dyakonova ◽  
M. Levinshtein ◽  
S. Contreras ◽  
W. Knap ◽  
B. Beaumont ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Spectral Density ◽  
Photon Energy ◽  
Electron Concentration ◽  
Low Frequency ◽  
Current Noise ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Frequency Range ◽  
First Time

ABSTRACTLow frequency noise has been investigated in hexagonal n-type GaN with equilibrium electron concentration n ∼ 1017 cm−3 at T=300 K. The frequency and temperature dependencies of the spectral density of the current noise, SI, have been studied in the frequency range f from 20 Hz to 20 kHz. Over the whole temperature range from T=80K to 400K the SI(f) dependence is very close to 1/f. The value of the Hooge constant, α, is very large: α ∼ 5 – 7 and is found to be temperature independent. The effects of illumination on the low frequency noise in GaN are studied for the first time. The noise is unaffected by illumination with photon energy Eph < Eg, while band-to band illumination (Eph∼Eg ) influences the low frequency noise, increasing the noise at higher temperatures, and decreasing it at lower temperatures.

Estimating the Quality of Thermionic Cathodes for Microwave Vacuum Tubes Using the Low-Frequency Noise Parameters

Vestnik MEI ◽  
2018 ◽  
Vol 5 (5) ◽  
pp. 120-127
Author(s):  
Mikhail D. Vorobyev ◽  
◽  
Dmitriy N. Yudaev ◽  
Andrey Yu. Zorin ◽  
◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Parameters ◽  
Thermionic Cathodes ◽  
Vacuum Tubes

Simulation of Low Frequency Noise in a CCTWT

1999 ◽  
Author(s):  
Charles K. Birdsall ◽  
J. P. Varboncoeur ◽  
P. J. Christensen
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise
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