Direct extraction of carrier mobility in graphene field-effect transistor using current-voltage and capacitance-voltage measurements

2012 ◽  
Vol 101 (21) ◽  
pp. 213103 ◽  
Author(s):  
Zhiyong Zhang ◽  
Huilong Xu ◽  
Hua Zhong ◽  
Lian-Mao Peng
Keyword(s):  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Direct Extraction ◽  
Graphene Field Effect Transistor ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Effect Transistor

scholarly journals Simulation of current-voltage characteristics of graphene field effect transistor (GFET)

2013 ◽  
Vol 16 (3) ◽  
pp. 5-12
Author(s):  
Hien Sy Dinh
Keyword(s):  
Field Effect ◽  
Function Method ◽  
Field Effect Transistor ◽  
Graphic User Interface ◽  
Graphene Field Effect Transistor ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Effect Transistor ◽  
Graphene Fet ◽  
Non Equilibrium Green’S Function

Graphene has been one of the most vigorously studied research materials. We have developed a program for simulation of graphene field effect transistor (GFET). In this work, we use the simulation program to explore the performance of graphene FET. The simple model of the graphene FET is based on non-equilibrium Green’s function method and first is implemented by using graphic user interface of Matlab. The current-voltage characteristics of the GFET and affects of channel materials, gate materials, size of graphene FET, temperature on the characteristics are explored.

Conduction Mechanism Based Model of Organic Field Effect Transistor Structure

2007 ◽  
Vol 555 ◽  
pp. 125-130
Author(s):  
Rajko M. Šašić ◽  
P.M. Lukić
Keyword(s):  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Conduction Mechanism ◽  
Mobility Model ◽  
Transistor Structure ◽  
Organic Field Effect Transistor ◽  
Current Voltage ◽  
Polymer Semiconductor ◽  
Effect Transistor

Carriers mobility model of olygomer and polymer semiconductor based OFET (Organic Field Effect Transistor) structures is presented in this paper. Starting from the conduction mechanism in the mentioned organic materials, a carrier mobility dependence on temperature, electric field and trap density μ(T,E,NT) was investigated, inspiring directly the current-voltage I(V) model of OFET structures. Subsequent simulations were also performed and the obtained results compared with the data available in the literature.

Understanding Surfactant/Graphene Interactions Using a Graphene Field Effect Transistor: Relating Molecular Structure to Hysteresis and Carrier Mobility

Langmuir ◽  
2012 ◽  
Vol 28 (22) ◽  
pp. 8579-8586 ◽  
Author(s):  
Chih-Jen Shih ◽  
Geraldine L. C. Paulus ◽  
Qing Hua Wang ◽  
Zhong Jin ◽  
Daniel Blankschtein ◽  
...  
Keyword(s):  
Molecular Structure ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor

scholarly journals Analytical model of carrier mobility in a Polymer Field Effect Transistor

2007 ◽  
Vol 61 (2) ◽  
pp. 55-59
Author(s):  
Milan Milosevic ◽  
Rifat Ramovic
Keyword(s):  
Analytical Model ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Experimental Results ◽  
Transistor Channel ◽  
Proposed Model ◽  
Current Voltage ◽  
Effect Transistor ◽  
Parameters Of Interest

In this paper, the carrier mobility analytical model in a POFET (Polymer Field Effect Transistor) channel is proposed. The model was developed on the basis of existing models and experimental results. The proposed model is universal because it encompasses the carrier mobility dependence on temperature, electric field and trap density in the POFET channel. The model is comparatively simple, easy for application and gives valuable results. According to the presented model, simulations of mobility as a function of the parameters of interest were performed. The obtained results are shown graphically. In comparison to accessible experimental results excellent correspondence was found. This model enables the calculation of simple POFET current-voltage I (V) characteristics.

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