The origin of giant dielectric relaxation and electrical responses of grains and grain boundaries of W-doped CaCu3Ti4O12 ceramics

2012 ◽  
Vol 112 (11) ◽  
pp. 114115 ◽  
Author(s):  
Prasit Thongbai ◽  
Jutapol Jumpatam ◽  
Bundit Putasaeng ◽  
Teerapon Yamwong ◽  
Santi Maensiri
Keyword(s):  
Dielectric Relaxation ◽  
Grain Boundaries ◽  
Giant Dielectric ◽  
Electrical Responses

Effects of DC bias on non-ohmic sample-electrode contact and grain boundary responses in giant-permittivity La1.7Sr0.3Ni1−xMgxO4 ceramics

RSC Advances ◽  
2016 ◽  
Vol 6 (94) ◽  
pp. 91377-91385 ◽  
Author(s):  
Keerati Meeporn ◽  
Narong Chanlek ◽  
Prasit Thongbai
Keyword(s):  
Dielectric Properties ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Giant Dielectric ◽  
Electrode Contact ◽  
Dc Bias ◽  
Electrical Responses

The effects of DC bias on the giant dielectric properties and electrical responses of non-ohmic sample-electrode contact and grain boundaries of La1.7Sr0.3Ni1−xMgxO4 (x = 0–0.5) ceramics were studied.

Giant dielectric relaxation in TlGaTe2 crystals

2011 ◽  
Vol 53 (8) ◽  
pp. 1564-1568 ◽  
Author(s):  
R. M. Sardarly ◽  
O. A. Samedov ◽  
A. P. Abdullaev ◽  
F. T. Salmanov
Keyword(s):  
Dielectric Relaxation ◽  
Giant Dielectric

Giant dielectric relaxation in SrTiO3-SrMg1/3Nb2/3O3 and SrTiO3-SrSc1/2Ta1/2O3 solid solutions

2002 ◽  
Vol 44 (11) ◽  
pp. 2039-2049 ◽  
Author(s):  
V. V. Lemanov ◽  
A. V. Sotnikov ◽  
E. P. Smirnova ◽  
M. Weihnacht
Keyword(s):  
Dielectric Relaxation ◽  
Solid Solutions ◽  
Giant Dielectric

Non-Ohmic Properties and Electrical Responses of Grains and Grain Boundaries of Na1/2Y1/2Cu3Ti4O12Ceramics

2016 ◽  
Vol 100 (1) ◽  
pp. 157-166 ◽  
Author(s):  
Jutapol Jumpatam ◽  
Weeraya Somphan ◽  
Jakkree Boonlakhorn ◽  
Bundit Putasaeng ◽  
Pinit Kidkhunthod ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Electrical Responses

Effects of Mg2+ doping ions on giant dielectric properties and electrical responses of Na1/2Y1/2Cu3Ti4O12 ceramics

2016 ◽  
Vol 42 (14) ◽  
pp. 16287-16295 ◽  
Author(s):  
Jutapol Jumpatam ◽  
Areeya Mooltang ◽  
Bundit Putasaeng ◽  
Pinit Kidkhunthod ◽  
Narong Chanlek ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Giant Dielectric ◽  
Electrical Responses

scholarly journals Microstructural Evolution and High-Performance Giant Dielectric Properties of Lu3+/Nb5+ Co-Doped TiO2 Ceramics

Molecules ◽  
2021 ◽  
Vol 26 (22) ◽  
pp. 7041
Author(s):  
Noppakorn Thanamoon ◽  
Narong Chanlek ◽  
Pornjuk Srepusharawoot ◽  
Ekaphan Swatsitang ◽  
Prasit Thongbai
Keyword(s):  
Dielectric Properties ◽  
Grain Boundaries ◽  
Dopant Concentration ◽  
Dielectric Behavior ◽  
Second Phase ◽  
Doped Tio2 ◽  
Dielectric Relaxations ◽  
Giant Dielectric ◽  
Second Phase Particles ◽  
Co Doped

Giant dielectric (GD) oxides exhibiting extremely large dielectric permittivities (ε’ > 104) have been extensively studied because of their potential for use in passive electronic devices. However, the unacceptable loss tangents (tanδ) and temperature instability with respect to ε’ continue to be a significant hindrance to their development. In this study, a novel GD oxide, exhibiting an extremely large ε’ value of approximately 7.55 × 104 and an extremely low tanδ value of approximately 0.007 at 103 Hz, has been reported. These remarkable properties were attributed to the synthesis of a Lu3+/Nb5+ co-doped TiO2 (LuNTO) ceramic containing an appropriate co-dopant concentration. Furthermore, the variation in the ε’ values between the temperatures of −60 °C and 210 °C did not exceed ±15% of the reference value obtained at 25 °C. The effects of the grains, grain boundaries, and second phase particles on the dielectric properties were evaluated to determine the dielectric properties exhibited by LuNTO ceramics. A highly dense microstructure was obtained in the as-sintered ceramics. The existence of a LuNbTiO6 microwave-dielectric phase was confirmed when the co-dopant concentration was increased to 1%, thereby affecting the dielectric behavior of the LuNTO ceramics. The excellent dielectric properties exhibited by the LuNTO ceramics were attributed to their inhomogeneous microstructure. The microstructure was composed of semiconducting grains, consisting of Ti3+ ions formed by Nb5+ dopant ions, alongside ultra-high-resistance grain boundaries. The effects of the semiconducting grains, insulating grain boundaries (GBs), and secondary microwave phase particles on the dielectric relaxations are explained based on their interfacial polarizations. The results suggest that a significant enhancement of the GB properties is the key toward improvement of the GD properties, while the presence of second phase particles may not always be effective.

Influence of Sn and F dopants on giant dielectric response and Schottky potential barrier at grain boundaries of CCTO ceramics

2021 ◽  
Author(s):  
Jutapol Jumpatam ◽  
Bundit Putasaeng ◽  
Narong Chanlek ◽  
Jedsada Manyam ◽  
Pornjuk Srepusharawoot ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Potential Barrier ◽  
Dielectric Response ◽  
Giant Dielectric

scholarly journals Apparent Giant Dielectric Constants, Dielectric Relaxation, and Ac-Conductivity of Hexagonal Perovskites La1.2Sr2.7BO7.33 (B: Ru, Ir).

ChemInform ◽  
2007 ◽  
Vol 38 (11) ◽  
Author(s):  
P. Lunkenheimer ◽  
T. Goetzfried ◽  
R. Fichtl ◽  
S. Weber ◽  
T. Rudolf ◽  
...  
Keyword(s):  
Dielectric Relaxation ◽  
Ac Conductivity ◽  
Dielectric Constants ◽  
Giant Dielectric ◽  
Hexagonal Perovskites
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