scholarly journals Interstitial Ti for intermediate band formation in Ti-supersaturated silicon

2012 ◽  
Vol 112 (11) ◽  
pp. 113514 ◽  
Author(s):  
D. Pastor ◽  
J. Olea ◽  
A. Muñoz-Martín ◽  
A. Climent-Font ◽  
I. Mártil ◽  
...  
Keyword(s):  
Band Formation ◽  
Intermediate Band

scholarly journals Intermediate band formation by InGaAs/GaAs multistacked quantum dots without strain compensation

2019 ◽  
Vol 1220 ◽  
pp. 012038
Author(s):  
Keishiro Goshima ◽  
Keisuke Inukai ◽  
Norio Tsuda ◽  
Takeyoshi Sugaya
Keyword(s):  
Quantum Dots ◽  
Band Formation ◽  
Intermediate Band ◽  
Strain Compensation

Insulator to metallic transition due to intermediate band formation in Ti-implanted silicon

2012 ◽  
Vol 104 ◽  
pp. 159-164 ◽  
Author(s):  
D. Pastor ◽  
J. Olea ◽  
A. del Prado ◽  
E. García-Hemme ◽  
R. García-Hernansanz ◽  
...  
Keyword(s):  
Band Formation ◽  
Intermediate Band

AlGaInAs Quantum Dots for Intermediate Band Formation in Solar Cell Devices

2013 ◽  
pp. 167-186 ◽  
Author(s):  
Stefan Kremling ◽  
Christian Schneider ◽  
Sven Höfling ◽  
Martin Kamp ◽  
Alfred Forchel
Keyword(s):  
Quantum Dots ◽  
Solar Cell ◽  
Band Formation ◽  
Intermediate Band

scholarly journals Experimental verification of intermediate band formation on titanium-implanted silicon

2013 ◽  
Vol 113 (2) ◽  
pp. 024104 ◽  
Author(s):  
H. Castán ◽  
E. Pérez ◽  
H. García ◽  
S. Dueñas ◽  
L. Bailón ◽  
...  
Keyword(s):  
Experimental Verification ◽  
Band Formation ◽  
Intermediate Band

Towards intermediate-band formation in solar cells with AlGaInAs quantum dots

2012 ◽  
Author(s):  
Stefan Kremling ◽  
Christian Schneider ◽  
Tristan Braun ◽  
Nadezda V. Tarakina ◽  
Maxwell Adams ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Band Formation ◽  
Intermediate Band

UV and visible Raman scattering of ultraheavily Ti implanted Si layers for intermediate band formation

2011 ◽  
Vol 26 (11) ◽  
pp. 115003 ◽  
Author(s):  
D Pastor ◽  
J Olea ◽  
A del Prado ◽  
E García-Hemme ◽  
I Mártil ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Band Formation ◽  
Intermediate Band

scholarly journals Influence of wetting layers and quantum dot size distribution on intermediate band formation in InAs/GaAs superlattices

2011 ◽  
Vol 110 (7) ◽  
pp. 073105 ◽  
Author(s):  
S. Huang ◽  
A. V. Semichaevsky ◽  
L. Webster ◽  
H. T. Johnson ◽  
R. S. Goldman
Keyword(s):  
Quantum Dot ◽  
Size Distribution ◽  
Band Formation ◽  
Intermediate Band ◽  
Wetting Layers
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