scholarly journals Erratum: “Absence of high-density consolute point in nematic hard rod mixtures” [J. Chem. Phys. 105, 11237 (1996)]

1998 ◽  
Vol 109 (4) ◽  
pp. 1584-1584 ◽  
Author(s):  
René van Roij ◽  
Bela Mulder
Keyword(s):  
Chem Phys ◽  
High Density ◽  
Consolute Point

Erratum: The susceptibility critical exponent for a nonaqueous ionic binary mixture near a consolute point [J. Chem. Phys. 97, 8692 (1992)]

1996 ◽  
Vol 105 (10) ◽  
pp. 4397-4397 ◽  
Author(s):  
Kaichang J. Zhang ◽  
Matthew E. Briggs ◽  
Robert W. Gammon ◽  
J. M. H. Levelt Sengers
Keyword(s):  
Binary Mixture ◽  
Critical Exponent ◽  
Chem Phys ◽  
Consolute Point

Absence of high‐density consolute point in nematic hard rod mixtures

1996 ◽  
Vol 105 (24) ◽  
pp. 11237-11245 ◽  
Author(s):  
René van Roij ◽  
Bela Mulder
Keyword(s):  
High Density ◽  
Consolute Point

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

Quantitative defect studies in semiconductor TEM samples prepared by low angle ion milling

1995 ◽  
Vol 53 ◽  
pp. 512-513
Author(s):  
L. Mulestagno ◽  
J.C. Holzer ◽  
P. Fraundorf
Keyword(s):  
Sample Preparation ◽  
Milling Time ◽  
High Density ◽  
Low Density ◽  
Ion Milling ◽  
High Quality ◽  
Variable Angle ◽  
Major Disadvantage ◽  
Induced Defects

Due to the wealth of information, both analytical and structural that can be obtained from it TEM always has been a favorite tool for the analysis of process-induced defects in semiconductor wafers. The only major disadvantage has always been, that the volume under study in the TEM is relatively small, making it difficult to locate low density defects, and sample preparation is a somewhat lengthy procedure. This problem has been somewhat alleviated by the availability of efficient low angle milling.Using a PIPS® variable angle ion -mill, manufactured by Gatan, we have been consistently obtaining planar specimens with a high quality thin area in excess of 5 × 104 μm2 in about half an hour (milling time), which has made it possible to locate defects at lower densities, or, for defects of relatively high density, obtain information which is statistically more significant (table 1).

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