On the role of stacking faults on dislocation generation and dislocation cluster formation in multicrystalline silicon

2012 ◽  
Vol 112 (10) ◽  
pp. 103528 ◽  
Author(s):  
Maulid M. Kivambe ◽  
Torunn Ervik ◽  
Birgit Ryningen ◽  
Gaute Stokkan
Keyword(s):  
Cluster Formation ◽  
Stacking Faults ◽  
Multicrystalline Silicon ◽  
Dislocation Generation ◽  
Dislocation Cluster

Role of metal impurities in multicrystalline silicon solar cell degradation

2021 ◽  
Vol 14 (11) ◽  
pp. 115502
Author(s):  
Zechen Hu ◽  
Dehang Lin ◽  
Xuegong Yu ◽  
Christoph Seiffert ◽  
Andrej Kuznetsov ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Multicrystalline Silicon ◽  
Metal Impurities

α -cluster formation and decay: The role of shell structure

2021 ◽  
Vol 104 (3) ◽  
Author(s):  
Shuo Yang ◽  
Chang Xu ◽  
Gerd Röpke
Keyword(s):  
Shell Structure ◽  
Cluster Formation

The role of stacking faults in the enhancement of the a-b plane peak in silver ion- irradiated commercial MOD REBCO wires

2022 ◽  
pp. 1-1
Author(s):  
Arya Ambadiyil Soman ◽  
Stuart C Wimbush ◽  
Martin W Rupich ◽  
Christian Notthoff ◽  
Patrick Kluth ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Silver Ion

The Role of Phase Stability in Ductile, Ordered B2 Intermetallics

2006 ◽  
Vol 980 ◽  
Author(s):  
James R. Morris ◽  
Yiying Ye ◽  
Maja Krcmar ◽  
Chong Long Fu
Keyword(s):  
Phase Stability ◽  
First Principles ◽  
Tensile Ductility ◽  
Stacking Faults ◽  
Low Energy ◽  
First Principles Calculations ◽  
Phase Competition ◽  
Transformation Pathway ◽  
Shape Memory Materials

AbstractWe discuss the underlying atomistic mechanism for experimentally observed large tensile ductility in various strongly ordered B2 intermetallic compounds. First-principles calculations demonstrate that all of the compounds exhibit little energy differences between the B2, B27 and B33 phases. These calculations relate observations of ductility in YAg, YCu and ZrCo to shape-memory materials including NiTi. One transformation pathway between the B2 and B33 phases establishes a connection between this phase competition, and stacking faults on the {011}B2 plane. The low energy of such a stacking fault will lead to splitting of the b=<100> dislocations into b/2 partials, observed in ZrCo, TiCo, and in the B19' phase of NiTi. Calculations demonstrate that this pathway is competitive with the traditional pathway for NiTi.

ON THE ROLE OF STACKING FAULTS IN SOME PROBLEMS OF GLIDE AND TWINNING IN CUBIC METALS

1967 ◽  
Vol 45 (2) ◽  
pp. 481-492 ◽  
Author(s):  
B. Escaig ◽  
G. Fontaine ◽  
J. Friedel
Keyword(s):  
Point Defects ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Dislocation Network ◽  
Thermal Variation ◽  
Temperature Dependent ◽  
Cubic Metals ◽  
Thermally Activated ◽  
Stacking Fault Energies

The possible role of stacking faults is discussed in some problems of glide and twinning of cubic metals, especially at low temperatures.The first part analyzes a model for the thermal variation of macroyield in b.c.c. metals. If one assumes that the dislocations of such metals split along either the (110) or the (112) planes, the screw dislocations will be sessile. The strong temperature variation of macroyield could be due to the thermally activated slip of such screws, previously developed at lower stresses during the less temperature-dependent microyield. Reasonably high stacking-fault energies are required for satisfactory numerical fits.The second part studies the influence of a dense dislocation network on the propagation of a stacking fault. The friction force acting on the partial that propagates the fault must be taken into account when deducing a stacking-fault energy from the stress at which stacking faults develop in a strongly work-hardened (f.c.c.) metal. The trails of dipoles left at each tree crossed should prevent any creation of point defects; they should lead, after the faults have propagated some length, to its multiplication into a twin or martensitic lamella. The analogies with problems of slip bauds and dipole formation in easy glide are stressed.

Identification of Microdefects in Multicrystalline Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
M. Werner ◽  
H. J. Möller ◽  
E. Wolf
Keyword(s):  
Point Defects ◽  
Stacking Faults ◽  
Multicrystalline Silicon ◽  
Etch Pits ◽  
Qualitative Comparison ◽  
Amorphous Silicon Dioxide ◽  
Agglomeration Process ◽  
Transmission Electron ◽  
Different Types ◽  
Defects And Impurities

ABSTRACTMicrodefects in multicrystalline silicon grown by directional solidification have been investigated by transmission electron microscopy. Their density (=106 cm−2) correlates with the density of shallow etch pits observed after chemomechanical polishing and selective etching. Different types of microdefects (size 10 – 100 nm) could be identified: i) spherical precipitates most likely amorphous silicon dioxide, ii) small plates lying on {111} planes and iii) groups of closely spaced stacking faults having the character of dipoles. It is argued that these defects are the result of agglomeration process of intrinsic point defects and impurities, where oxygen and carbon are the main candidates. A qualitative comparison to the point defects agglomeration observed in Cz material will be given.

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