Phosphorous transient enhanced diffusion suppression and activation enhancement with cluster carbon co-implantation

2012 ◽  
Author(s):  
Yoshiki Nakashima ◽  
Nariaki Hamamoto ◽  
Tsutomu Nagayama ◽  
Yuji Koga ◽  
Sei Umisedo ◽  
...  
Keyword(s):  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

scholarly journals Enhanced Diffusion of Dopants in Vacancy Supersaturation Produced by MeV Implantation

1997 ◽  
Vol 469 ◽  
Author(s):  
V. C. Venezia ◽  
T. E. Haynes ◽  
A. Agarwal ◽  
H. -J. Gossmann ◽  
D. J. Eaglesham
Keyword(s):  
Surface Layer ◽  
Surface Region ◽  
Silicon On Insulator ◽  
Rich Region ◽  
Near Surface ◽  
Enhanced Diffusion ◽  
Float Zone ◽  
Transient Enhanced Diffusion

ABSTRACTThe diffusion of Sb and B markers has been studied in vacancy supersaturations produced by MeV Si implantation in float zone (FZ) silicon and bonded etch-back silicon-on-insulator (BESOI) substrates. MeV Si implantation produces a vacancy supersaturated near-surface region and an interstitial-rich region at the projected ion range. Transient enhanced diffusion (TED) of Sb in the near surface layer was observed as a result of a 2 MeV Si+, 1×1016/cm2, implant. A 4× larger TED of Sb was observed in BESOI than in FZ silicon, demonstrating that the vacancy supersaturation persists longer in BESOI than in FZ. B markers in samples with MeV Si implant showed a factor of 10× smaller diffusion relative to markers without the MeV Si+ implant. This data demonstrates that a 2 MeV Si+ implant injects vacancies into the near surface region.

Ultra Shallow Junction Formation by B+/BF2+ Implantation at Energy of 0.5 KEV

1998 ◽  
Vol 532 ◽  
Author(s):  
M. Kase ◽  
Y Kikuchi ◽  
H. Niwa ◽  
T. Kimura
Keyword(s):  
Junction Depth ◽  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Junction Formation

ABSTRACTThis paper describes ultra shallow junction formation using 0.5 keV B+/BF2+ implantation, which has the advantage of a reduced channeling tail and no transient enhanced diffusion. In the case of l × 1014 cm−2, 0.5 keV BF2 implantation a junction depth of 19 nm is achieved after RTA at 950°C.

Effects of Carbon Co-Implantation on Transient Enhanced Diffusion and Performances of the Phosphorus Doped Ultra-Shallow Junction Nano NMOSFET

2013 ◽  
Vol 284-287 ◽  
pp. 98-102
Author(s):  
Hung Yu Chiu ◽  
Yean Kuen Fang ◽  
Feng Renn Juang
Keyword(s):  
Cmos Technology ◽  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Technology Applications ◽  
Implantation Process ◽  
Phosphorus Doped

The carbon (C) co-implantation and advanced flash anneal were employed to form the ultra shallow junction (USJ) for future nano CMOS technology applications. The effects of the C co-implantation process on dopant transient enhanced diffusion (TED) of the phosphorus (P) doped nano USJ NMOSFETs were investigated in details. The USJ NMOSFETs were prepared by a foundry’s 55 nano CMOS technology. Various implantation energies and doses for both C and P ions were employed. Results show the suppression of the TED is strongly dependent on both C and P implantation conditions. Besides, the mechanisms of P TED and suppression by C ion co-implantation were illustrated comprehensively with schematic models.

High Performance 0.2 µm Dual Gate Complementary MOS Technologies by Suppression of Transient-Enhanced-Diffusion using Rapid Thermal Annealing

1998 ◽  
Vol 37 (Part 1, No. 3B) ◽  
pp. 1054-1058 ◽  
Author(s):  
Yukio Nishida ◽  
Hirokazu Sayama ◽  
Satoshi Shimizu ◽  
Takashi Kuroi ◽  
Akihiko Furukawa ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Performance ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Dual Gate
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