A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures
2008 ◽
Vol 20
(32)
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pp. 325206
1986 ◽
Vol 33
(5)
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pp. 572-575
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1990 ◽
Vol 7
(4)
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pp. 393-395
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2000 ◽
Vol 6
(1-4)
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pp. 751-754
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