A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures

2012 ◽  
Vol 101 (18) ◽  
pp. 182102
Author(s):  
Jieqin Ding ◽  
Xiaoliang Wang ◽  
Hongling Xiao ◽  
Cuimei Wang ◽  
Hong Chen ◽  
...  
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