Acoustic resonator based on periodically poled transducers: Fabrication and characterization

2012 ◽  
Vol 112 (7) ◽  
pp. 074108 ◽  
Author(s):  
F. Bassignot ◽  
E. Courjon ◽  
G. Ulliac ◽  
S. Ballandras ◽  
J.-M. Lesage ◽  
...  
Author(s):  
F. Henrot ◽  
F. Bassignot ◽  
B. Guichardaz ◽  
G. Ulliac ◽  
E. Courjon ◽  
...  

2011 ◽  
Vol 254 ◽  
pp. 144-147 ◽  
Author(s):  
Somsing Rathod ◽  
Atul Vir Singh ◽  
Sudhir Chandra ◽  
Shiban K. Koul

In the present work we report design, simulation, fabrication and characterization of thin film bulk acoustic resonator (FBAR). The FBAR has been modeled as a single port device with two terminals. The FBAR has been fabricated using Si-SiO2-Al–ZnO-Al structure. Zinc Oxide (ZnO) films were deposited by RF magnetron sputtering using Ceramic ZnO target in Ar-O2(1:1) ambient without external substrate heating. The XRD result confirms the preferred C-axis orientation of the films required for good piezoelectric properties. These ZnO films have been used to fabricate air gap type resonator. A four mask process sequence was used for this purpose. Lift-off process was used to pattern Al top electrode. In order to create the air cavity under the active device area, the bulk Si was etched in 40 % KOH at 80 °C. A specially designed mechanical jig was used to protect the front side of the device during anisotropic etching. Vector network analyzer was used to measure the reflection coefficient (S11: Return Loss) of the device. The resonant frequency of the resonator was measured to be 2.89 GHz as compare to the simulated frequency of 2.85 GHz with a return loss of 14.51 dB.


2012 ◽  
Vol 111 (6) ◽  
pp. 064106 ◽  
Author(s):  
F. Bassignot ◽  
E. Courjon ◽  
G. Ulliac ◽  
S. Ballandras ◽  
J.-M. Lesage ◽  
...  

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