scholarly journals Dimensional crossover of charge density wave and thermoelectric properties in CeTe2−xSbx single crystals

2012 ◽  
Vol 101 (14) ◽  
pp. 143901 ◽  
Author(s):  
Kyung Eun Lee ◽  
Byeong Hun Min ◽  
Jong-Soo Rhyee ◽  
Jae Nyeong Kim ◽  
Ji Hoon Shim ◽  
...  
1998 ◽  
Vol 57 (4) ◽  
pp. R2003-R2005 ◽  
Author(s):  
Noriyuki Hatakenaka ◽  
Masato Shiobara ◽  
Ken-ichi Matsuda ◽  
Satoshi Tanda

2019 ◽  
Vol 99 (15) ◽  
Author(s):  
M.-L. Mottas ◽  
T. Jaouen ◽  
B. Hildebrand ◽  
M. Rumo ◽  
F. Vanini ◽  
...  

2014 ◽  
Vol 115 (4) ◽  
pp. 043915 ◽  
Author(s):  
Y. Liu ◽  
L. J. Li ◽  
W. J. Lu ◽  
R. Ang ◽  
X. Z. Liu ◽  
...  

2D Materials ◽  
2017 ◽  
Vol 4 (4) ◽  
pp. 041005 ◽  
Author(s):  
Árpád Pásztor ◽  
Alessandro Scarfato ◽  
Céline Barreteau ◽  
Enrico Giannini ◽  
Christoph Renner

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Edwin Herrera ◽  
Víctor Barrena ◽  
Isabel Guillamón ◽  
José Augusto Galvis ◽  
William J. Herrera ◽  
...  

AbstractSingle crystals of URu2Si2 show below 17.5 K a transition into an ordered state with a significantly reduced entropy. The low temperature phase is called the hidden order (HO) state, because its microscopic origin is still unknown—there are no charge, structural or magnetic transitions associated to HO. Here we report a one-dimensional (1D) charge modulation within the HO state of URu2Si2. We perform detailed Scanning Tunneling Microscopy (STM) experiments with high resolution on many atomically flat surfaces of URu2Si2 obtained by fracturing single crystals at cryogenic temperatures and find a 1D charge density wave with a large wavevector. We show that the 1D modulation is connected to the dynamical magnetic excitations of the HO through a moiré construction and appears as a consequence of excitations quenched through the interaction between the travelling fracture front and the dynamic modes of the crystal. The combination of fracture dynamics and the dynamics of the solid provides a method to create ground states and shows that charge interactions are among the most relevant features competing with HO in URu2Si2.


2007 ◽  
Vol 21 (18n19) ◽  
pp. 3334-3339 ◽  
Author(s):  
T. TAMEGAI ◽  
G. J. LI

Anisotropic superconducting properties in Sc 5 Ir 4 Si 10 and Lu 5 Ir 4 Si 10 single crystals are investigated. Both of these compounds are found to show quasi-one-dimensional superconductivity with better conduction along the c-axis and anisotropy parameter of about 2. Reflecting the partial destruction of the Fermi surface due to charge-density-wave formation, Lu 5 Ir 4 Si 10 shows higher residual resistivity, lower superconducting transition temperature, and longer magnetic penetration depths compared with those of Sc 5 Ir 4 Si 10. Similarity of superconducting properties including the anisotropy in Sc 5 Ir 4 Si 10 and Lu 5 Ir 4 Si 10 indicates that the absence of the charge-density wave in Sc 5 Ir 4 Si 10 is controlled by a subtle difference in the Fermi surface topologies in these two compounds.


2013 ◽  
Vol 111 (2) ◽  
pp. 465-470 ◽  
Author(s):  
Ranu Bhatt ◽  
Ranita Basu ◽  
S. Bhattacharya ◽  
A. Singh ◽  
D. K. Aswal ◽  
...  

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