Microstructural and ferromagnetic resonance properties of epitaxial nickel ferrite films grown by chemical vapor deposition

2012 ◽  
Vol 101 (13) ◽  
pp. 132409 ◽  
Author(s):  
N. Li ◽  
S. Schäfer ◽  
R. Datta ◽  
T. Mewes ◽  
T. M. Klein ◽  
...  
Author(s):  
Rachel Walker ◽  
M. Singh ◽  
Y. Yang ◽  
C.G. Takoudis

Chemical vapor deposition was used to deposit thin films of nickel oxide (NiO) and iron oxide (Fe2O3) on silicon substrates. Precursors chosen for this process were nickelocene,Ni(C5H5)2 and n-butylferrocene, Fe(C5H4C4H9)(C5H5), which were oxidized with oxygen gas in a low-pressure chemical vapor deposition system. Following the deposition of the individual metal oxides, the two precursors were used together with the goal of depositing a thin film of nickel ferrite (NiFe2O4). Both co-deposition and cyclic deposition were carried out, and the resulting thin films were analyzed using x-ray photoelectron spectroscopy. This study found that the resulting thin films did not contain NiFe2O4, but were composed of NiO and Fe2O3 in a different ratio. It is suggested that changing various parameters in this experiment can be used to vary this ratio.


2014 ◽  
Vol 105 (1) ◽  
pp. 012407 ◽  
Author(s):  
H. Yu ◽  
M. Harberts ◽  
R. Adur ◽  
Y. Lu ◽  
P. Chris Hammel ◽  
...  

2021 ◽  
pp. 2100949
Author(s):  
Dennis Zywitzki ◽  
Raoul Schaper ◽  
Engin Ciftyürek ◽  
Jan‐Lucas Wree ◽  
Dereje H. Taffa ◽  
...  

Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.


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