Effect of fast neutron irradiation induced defects on the metamagnetic transition In Ce(Fe0.96Ru0.04)2

2012 ◽  
Vol 112 (6) ◽  
pp. 063922 ◽  
Author(s):  
C. L. Prajapat ◽  
V. Dube ◽  
A. K. Rajarajan ◽  
S. V. Thakare ◽  
K. C. Jagadeesan ◽  
...  
Author(s):  
Ivana Capan ◽  
Tomislav Brodar ◽  
Takahiro Makino ◽  
Vladimir Radulovic ◽  
Luka Snoj

We report on metastable defects introduced in n-type 4H-SiC material by epithermal and fast neutron irradiation. The epithermal and fast neutron irradiation defects in 4H-SiC are much less explored compared to electron or proton irradiation induced defects. In addition to silicon vacancy (Vsi) and carbon antisite-carbon vacancy (CAV) complex, the neutron irradiation has introduced four deep level defects, all arising from the metastable defect, the M-center. The metastable deep level defects were investigated by deep level transient spectroscopy (DLTS), high-resolution Laplace DLTS (L-DLTS) and isothermal DLTS. The existence of the fourth deep level M4, recently observed in ion implanted 4H-SiC, has been additionally confirmed in neutron irradiated samples. The isothermal DLTS technique has been proven as a useful tool for studying the metastable defects.


Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1404
Author(s):  
Ivana Capan ◽  
Tomislav Brodar ◽  
Takahiro Makino ◽  
Vladimir Radulovic ◽  
Luka Snoj

We report on the metastable defects introduced in the n-type 4H-SiC material by epithermal and fast neutron irradiation. The epithermal and fast neutron irradiation defects in 4H-SiC are much less explored compared to electron or proton irradiation-induced defects. In addition to the carbon vacancy (Vc), silicon vacancy (Vsi) and carbon antisite-carbon vacancy (CAV) complex, the neutron irradiation has introduced four deep-level defects, all arising from the metastable defect, the M-center. The metastable deep-level defects were investigated by deep level transient spectroscopy (DLTS), high-resolution Laplace DLTS (L-DLTS) and isothermal DLTS. The existence of the fourth deep-level defect, M4, recently observed in ion-implanted 4H-SiC, has been additionally confirmed in neutron-irradiated samples. The isothermal DLTS technique has been proven as a useful tool for studying the metastable defects.


2012 ◽  
Author(s):  
C. L. Prajapat ◽  
V. Dube ◽  
A. K. Rajarajan ◽  
S. V. Thakare ◽  
K. C. Jagadeesan ◽  
...  

1997 ◽  
Vol 140 (3-4) ◽  
pp. 385-394
Author(s):  
W. G. Osiris ◽  
Wafa I. Abdel-Fattah ◽  
Z. Mohsen ◽  
A. El-Shabini

1972 ◽  
Vol 9 (2) ◽  
pp. 721-730 ◽  
Author(s):  
J. A. Horak ◽  
T. H. Blewitt

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