Erratum: “Work function tuning and improved gate dielectric reliability with multilayer graphene as a gate electrode for metal oxide semiconductor field effect device applications” [Appl. Phys. Lett. 100, 233506 (2012)]

Abhishek Misra; Mayur Waikar; Amit Gour; Hemen Kalita; Manali Khare; Mohammed Aslam; Anil Kottantharayil

doi:10.1063/1.4754145

Erratum: “Work function tuning and improved gate dielectric reliability with multilayer graphene as a gate electrode for metal oxide semiconductor field effect device applications” [Appl. Phys. Lett. 100, 233506 (2012)]

Applied Physics Letters ◽

10.1063/1.4754145 ◽

2012 ◽

Vol 101 (12) ◽

pp. 129902

Author(s):

Abhishek Misra ◽

Mayur Waikar ◽

Amit Gour ◽

Hemen Kalita ◽

Manali Khare ◽

...

Keyword(s):

Metal Oxide ◽

Work Function ◽

Field Effect ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Multilayer Graphene ◽

Gate Electrode ◽

Work Function Tuning ◽

Device Applications

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Work function tuning and improved gate dielectric reliability with multilayer graphene as a gate electrode for metal oxide semiconductor field effect device applications

Applied Physics Letters ◽

10.1063/1.4726284 ◽

2012 ◽

Vol 100 (23) ◽

pp. 233506 ◽

Cited By ~ 18

Author(s):

Abhishek Misra ◽

Mayur Waikar ◽

Amit Gour ◽

Hemen Kalita ◽

Manali Khare ◽

...

Keyword(s):

Metal Oxide ◽

Work Function ◽

Field Effect ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Multilayer Graphene ◽

Gate Electrode ◽

Work Function Tuning ◽

Device Applications

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Effects of a Gd capping layer on electrical characteristics of metal-oxide-semiconductor field effect transistors with a TaC gate electrode and a HfSiON gate dielectric

Applied Physics Letters ◽

10.1063/1.3264086 ◽

2009 ◽

Vol 95 (19) ◽

pp. 192113 ◽

Cited By ~ 7

Author(s):

Hong Bae Park ◽

Chang Seo Park ◽

Chang Yong Kang ◽

Seung-Chul Song ◽

Byoung Hun Lee ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Gate Electrode ◽

Capping Layer

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Work function tuning of the TixTayN metal gate electrode for advanced metal-oxide-semiconductor devices applications

Applied Physics Letters ◽

10.1063/1.2472531 ◽

2007 ◽

Vol 90 (6) ◽

pp. 062114 ◽

Cited By ~ 16

Author(s):

Chin-Lung Cheng ◽

Chien-Wei Liu ◽

Jin-Tsong Jeng

Keyword(s):

Metal Oxide ◽

Work Function ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Electrode ◽

Metal Gate ◽

Work Function Tuning

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High Performance β-Ga2O3 Solar-Blind Metal–Oxide–Semiconductor Field-Effect Phototransistor With Hafnium Oxide Gate Dielectric Process

IEEE Electron Device Letters ◽

10.1109/led.2021.3061509 ◽

2021 ◽

Vol 42 (4) ◽

pp. 545-548

Author(s):

Zhe Li ◽

Zhaoqing Feng ◽

Yu Xu ◽

Qian Feng ◽

Weidong Zhu ◽

...

Keyword(s):

Metal Oxide ◽

Hafnium Oxide ◽

Field Effect ◽

High Performance ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Solar Blind

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Molybdenum Film Technology For Power Metal Oxide Semiconductor Field Effect Transistor Gate Electrode Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.3915 ◽

2000 ◽

Vol 39 (Part 1, No. 7A) ◽

pp. 3915-3918 ◽

Cited By ~ 3

Author(s):

Ying-Kun Liu ◽

Chun-Guang Liang ◽

Zhan-Li Wang ◽

Yu-Zhang He ◽

Xiu-Lan Lang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Electrode ◽

Effect Transistor

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Negative transconductance effect in metal oxide semiconductor field effect transistors fabricated with Ta/sub 2/O/sub 5/ gate dielectric

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) ◽

10.1109/hkedm.2000.904206 ◽

2002 ◽

Author(s):

B.C.M. Lai ◽

J.Y.M. Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Correlations between structural and electrical properties of nitrided SiOx thin films used as power metal oxide semiconductor field effect transistor gate dielectric

Applied Physics Letters ◽

10.1063/1.3021404 ◽

2008 ◽

Vol 93 (18) ◽

pp. 182109

Author(s):

E. Fazio ◽

F. Neri ◽

G. Curró M. Camalleri ◽

D. Calí

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Structural And Electrical Properties ◽

Effect Transistor

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Off‐state leakage currents in n‐channel metal‐oxide‐semiconductor field‐effect transistors with 10‐nm thermally nitrided and reoxidized nitrided oxides as the gate dielectric

Applied Physics Letters ◽

10.1063/1.105826 ◽

1991 ◽

Vol 59 (23) ◽

pp. 3006-3008 ◽

Cited By ~ 5

Author(s):

S. Fleischer ◽

Z. H. Liu ◽

P. T. Lai ◽

P. K. Ko ◽

Y. C. Cheng

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Leakage Currents

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Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12Å using stacked HfAlOx∕HfO2 gate dielectric

Applied Physics Letters ◽

10.1063/1.2943186 ◽

2008 ◽

Vol 92 (25) ◽

pp. 253506 ◽

Cited By ~ 22

Author(s):

Han Zhao ◽

Davood Shahrjerdi ◽

Feng Zhu ◽

Hyoung-Sub Kim ◽

Injo OK ◽

...

Keyword(s):

Indium Phosphide ◽

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness

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