scholarly journals Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure

2012 ◽  
Vol 101 (11) ◽  
pp. 112106 ◽  
Author(s):  
Y. Zhu ◽  
N. Jain ◽  
D. K. Mohata ◽  
S. Datta ◽  
D. Lubyshev ◽  
...  
Keyword(s):  
Structural Properties ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Band Offset ◽  
Type Ii ◽  
Transistor Structure ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

scholarly journals Electron and hole photoemission detection for band offset determination of tunnel field-effect transistor heterojunctions

2014 ◽  
Vol 105 (21) ◽  
pp. 213501 ◽  
Author(s):  
Wei Li ◽  
Qin Zhang ◽  
R. Bijesh ◽  
Oleg A. Kirillov ◽  
Yiran Liang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Band Offset ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

scholarly journals A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Xiaoshi Jin ◽  
Yicheng Wang ◽  
Kailu Ma ◽  
Meile Wu ◽  
Xi Liu ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Structural Parameters ◽  
Cmos Integrated Circuits ◽  
Region Length ◽  
Internal Mechanism ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Switching Characteristics

AbstractA bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated circuits compared to the conventional asymmetrical TFET. The effects of the structural parameters, e.g., the doping concentrations of the N+ region and P+ region, length of the N+ region and length of the intrinsic region, on the device performances, e.g., the transfer characteristics, Ion–Ioff ratio and subthreshold swing, and the internal mechanism are discussed and explained in detail.

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