Photoluminescence properties and high resolution x-ray diffraction investigation of BInGaAs/GaAs grown by the metalorganic vapour phase epitaxy method

2012 ◽  
Vol 112 (6) ◽  
pp. 063109 ◽  
Author(s):  
Radhia Hamila ◽  
Faouzi Saidi ◽  
Hassen Maaref ◽  
Philippe Rodriguez ◽  
Laurent Auvray
Keyword(s):  
High Resolution ◽  
Vapour Phase ◽  
Photoluminescence Properties ◽  
X Ray Diffraction ◽  
Vapour Phase Epitaxy ◽  
X Ray ◽  
Metalorganic Vapour Phase Epitaxy

Growth of Uncracked Al0.80Ga0.20N/GaN DBR on Si(111)

2004 ◽  
Vol 831 ◽  
Author(s):  
M. B. Charles ◽  
M. J. Kappers ◽  
C. J. Humphreys
Keyword(s):  
Room Temperature ◽  
Crack Formation ◽  
Compressive Strain ◽  
Vapour Phase ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
X Ray Diffraction ◽  
Vapour Phase Epitaxy ◽  
X Ray ◽  
Metalorganic Vapour Phase Epitaxy

ABSTRACTThe strain in Al0.80Ga0.20N/GaN distributed Bragg reflectors (DBRs) grown by metalorganic vapour phase epitaxy (MOVPE) on Si(111) was studied using high resolution X-ray diffraction (XRD). Previous studies have shown that a 50nm Al0.80Ga0.20N layer induced a compressive strain in Al0.12Ga0.88N capping layers and prevented crack formation. A seven period Al0.80Ga0.20N/GaN DBR was grown, but this was found to be cracked at room temperature, despite compression in the GaN layers. This problem was solved by growing an identical structure with the addition of a 650nm GaN cap, and due to the compression in this layer, the structure was crack-free.

scholarly journals Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Duc V. Dinh ◽  
Nan Hu ◽  
Yoshio Honda ◽  
Hiroshi Amano ◽  
Markus Pristovsek
Keyword(s):  
Room Temperature ◽  
Optical Emission ◽  
Vapour Phase ◽  
Optical Data ◽  
Bandgap Energy ◽  
X Ray Diffraction ◽  
Vapour Phase Epitaxy ◽  
X Ray ◽  
Metal Organic ◽  
Organic Vapour

Abstract Growth of AlxGa1−xN layers (0 ≤ x ≤ 1) simultaneously on polar (0001), semipolar ($$10\bar{{\rm{1}}}$$ 10 1 ¯ 3) and ($$11\bar{{\rm{2}}}2$$ 11 2 ¯ 2 ), as well as nonpolar ($$10\bar{{\rm{1}}}0$$ 10 1 ¯ 0 ) and ($$11\bar{{\rm{2}}}0$$ 11 2 ¯ 0 ) AlN templates, which were grown on planar sapphire substrates, has been investigated by metal-organic vapour phase epitaxy. By taking into account anisotropic in-plane strain of semi- and non-polar layers, their aluminium incorporation has been determined by x-ray diffraction analysis. Optical emission energy of the layers was obtained from room-temperature photoluminescence spectra, and their effective bandgap energy was estimated from room-temperature pseudo-dielectric functions. Both x-ray diffraction and optical data consistently show that aluminium incorporation is comparable on the polar, semi- and non-polar planes.

Characterization of Sub-Surface Structures by Double Crystal X-Ray Diffraction

1986 ◽  
Vol 82 ◽  
Author(s):  
D.K. Bowen ◽  
M.J. Hill ◽  
B.K. Tanner
Keyword(s):  
Vapour Phase ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Vapour Phase Epitaxy ◽  
X Ray ◽  
Glancing Angle ◽  
Graded Layers ◽  
Superlattice Structures

ABSTRACTThe application of double crystal X-ray diffractometry and computer simulation to the characterization of lattice parameter variations through the thickness of heteroepitaxial layers is reviewed. The sensitivity is demonstrated in studies of graded layers grown by vapour phase epitaxy. Capping layers significantly affect rocking curves from superlattice structures. The use of glancing angle diffraction to characterize thin, low period multilayers is examined.

HVPE Growth of GaN Layers on Cleaved β-Ga2O3 Substrates

2016 ◽  
Vol 674 ◽  
pp. 302-307 ◽  
Author(s):  
V.I. Nikolaev ◽  
A.I. Pechnikov ◽  
S.I. Stepanov ◽  
V.M. Krymov ◽  
V.N. Maslov ◽  
...  
Keyword(s):  
Deposition Time ◽  
Substrate Surface ◽  
Vapour Phase ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
Nucleation Layer ◽  
Vapour Phase Epitaxy ◽  
X Ray ◽  
Gan Film

GaN epitaxial layers were successfully grown by hydride vapour phase epitaxy (HVPE) on β-Ga2O3 substrates produced by cleaving. The initial stages of GaN epitaxial growth on β-Ga2O3 were studied by scanning electron microscopy (SEM) and x-ray diffraction analysis (XRD). The nucleation and the transition from the nucleation layer to a continuous GaN film were studied. It was found that the growth starts with formation of small crystallites on the substrate surface. As the growth continues, crystallites transform into pyramidal islands which increase in size and merge together. It was found that the structural quality of the GaN layers rapidly improves with increasing thickness. The full width at half maximum of x-ray ω rocking curves for (0002) peak decreased from 1370 to 540 arcsec as the deposition time was increased from 30 to 120 sec. This corresponds to the variation of the nominal layer thickness from 250 nm to 1000 nm.

Optical and X-ray analysis of ZnSxSe1−x/ZnSe superlattices grown on GaAs by metalorganic vapour phase epitaxy

1994 ◽  
Vol 138 (1-4) ◽  
pp. 612-618 ◽  
Author(s):  
J. Hermans ◽  
J. Woitok ◽  
W. Schiffers ◽  
J. Geurts ◽  
A. Schneider ◽  
...  
Keyword(s):  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
X Ray ◽  
Metalorganic Vapour Phase Epitaxy

X-ray diffraction evidence for transient composition effects in MOVPE multilayer growth for Ga1−x Al x As alloys

1987 ◽  
Vol 20 (3) ◽  
pp. 230-234 ◽  
Author(s):  
S. Bensoussan ◽  
C. Malgrange ◽  
M. Sauvage-Simkin ◽  
K. N'Guessan ◽  
P. Gibart
Keyword(s):  
Vapour Phase ◽  
Thin Layers ◽  
X Ray Diffraction ◽  
Vapour Phase Epitaxy ◽  
Rocking Curve ◽  
X Ray ◽  
Layer Stacking ◽  
Metal Organic ◽  
Organic Vapour ◽  
Ray Methods

X-ray rocking-curve analysis is applied to the detection of artifacts in multilayer epitactic growth of III–V ternary compounds by metal–organic vapour-phase epitaxy (MOVPE). Transient spikes in the composition result in unwanted additional thin layers whose presence disturbs the interference pattern expected from the designed heterostructures, thus modifying the oscillating part of the reflection profile. X-ray methods and secondary-ion mass spectroscopy (SIMS) lead to descriptions of the actual layer stacking in good agreement with each other.

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