scholarly journals Overall performance evaluation using an equivalent circuit model for radio-frequency single-electron transistors

AIP Advances ◽  
2012 ◽  
Vol 2 (3) ◽  
pp. 032161 ◽  
Author(s):  
Saxon Liou ◽  
Wei-Chen Chien ◽  
Watson Kuo
Keyword(s):  
Performance Evaluation ◽  
Radio Frequency ◽  
Equivalent Circuit ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Overall Performance ◽  
Electron Transistors

scholarly journals Silicon-on-Insulator-Based Radio Frequency Single-Electron Transistors Operating at Temperatures above 4.2 K

Nano Letters ◽  
2008 ◽  
Vol 8 (12) ◽  
pp. 4648-4652 ◽  
Author(s):  
M. Manoharan ◽  
Yoshishige Tsuchiya ◽  
Shunri Oda ◽  
Hiroshi Mizuta
Keyword(s):  
Radio Frequency ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

scholarly journals Radio-frequency single electron transistors in physically defined silicon quantum dots with a sensitive phase response

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Raisei Mizokuchi ◽  
Sinan Bugu ◽  
Masaru Hirayama ◽  
Jun Yoneda ◽  
Tetsuo Kodera
Keyword(s):  
Quantum Dots ◽  
Radio Frequency ◽  
Impedance Matching ◽  
Electrical Circuit ◽  
Phase Response ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Large Phase ◽  
Electron Transistors

AbstractRadio-frequency reflectometry techniques are instrumental for spin qubit readout in semiconductor quantum dots. However, a large phase response is difficult to achieve in practice. In this work, we report radio-frequency single electron transistors using physically defined quantum dots in silicon-on-insulator. We study quantum dots which do not have the top gate structure considered to hinder radio frequency reflectometry measurements using physically defined quantum dots. Based on the model which properly takes into account the parasitic components, we precisely determine the gate-dependent device admittance. Clear Coulomb peaks are observed in the amplitude and the phase of the reflection coefficient, with a remarkably large phase signal of ∼45°. Electrical circuit analysis indicates that it can be attributed to a good impedance matching and a detuning from the resonance frequency. We anticipate that our results will be useful in designing and simulating reflectometry circuits to optimize qubit readout sensitivity and speed.

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