Switching dynamics and charge transport studies of resistive random access memory devices

2012 ◽  
Vol 101 (11) ◽  
pp. 113503 ◽  
Author(s):  
Branden Long ◽  
Yibo Li ◽  
Saptarshi Mandal ◽  
Rashmi Jha ◽  
Kevin Leedy
Keyword(s):  
Charge Transport ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Transport Studies ◽  
Switching Dynamics

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

The effects of substrate temperature on ZnO-based resistive random access memory devices

2012 ◽  
Vol 21 (6) ◽  
pp. 065201 ◽  
Author(s):  
Jian-Wei Zhao ◽  
Feng-Juan Liu ◽  
Hai-Qin Huang ◽  
Zuo-Fu Hu ◽  
Xi-Qing Zhang
Keyword(s):  
Substrate Temperature ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory

Operations, Charge Transport, and Random Telegraph Noise in HfOx Resistive Random Access Memory: a Multi-scale Modeling Study

MRS Advances ◽  
2016 ◽  
Vol 1 (5) ◽  
pp. 327-338 ◽  
Author(s):  
Francesco M. Puglisi ◽  
Luca Larcher ◽  
Andrea Padovani ◽  
Paolo Pavan
Keyword(s):  
Charge Transport ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Operating Conditions ◽  
Current Fluctuations ◽  
Access Memory ◽  
Random Telegraph Noise ◽  
Multi Scale ◽  
Telegraph Noise

ABSTRACTIn this work we explore the mechanisms responsible for Random Telegraph Noise (RTN) fluctuations in HfOx Resistive Random Access Memory (RRAM) devices. The statistical properties of the RTN are analyzed in many operating conditions exploiting the Factorial Hidden Markov Model (FHMM) to decompose the multilevel RTN traces in a superposition of two-level fluctuations. This allows the simultaneous characterization of individual defects contributing to the RTN. Results, together with multi-scale physics-based simulations, allows thoroughly investigating the physical mechanisms which could be responsible for the RTN current fluctuations in the two resistive states of these devices, including also the charge transport features in a comprehensive framework. We consider two possible options, which are the Coulomb blockade effect and the possible existence of metastable states for the defects assisting charge transport. Results indicate that both options may be responsible for RTN current fluctuations in HRS, while RTN in LRS is attributed to the temporary screening effect of the charge trapped at defect sites around the conductive filament.

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