scholarly journals Transport properties of Ni, Co, Fe, Mn doped Cu0.01Bi2Te2.7Se0.3 for thermoelectric device applications

2012 ◽  
Vol 112 (5) ◽  
pp. 054509 ◽  
Author(s):  
K. C. Lukas ◽  
W. S. Liu ◽  
Z. F. Ren ◽  
C. P. Opeil
Keyword(s):  
Transport Properties ◽  
Thermoelectric Device ◽  
Device Applications ◽  
Mn Doped

Investigation of structure, magnetic, and transport properties of Mn-doped SiC films

2013 ◽  
Vol 31 (4) ◽  
pp. 041507 ◽  
Author(s):  
Xianke Sun ◽  
Ruisong Guo ◽  
Yukai An ◽  
Jiwen Liu
Keyword(s):  
Transport Properties ◽  
Mn Doped ◽  
Sic Films

Solution processed copper zinc tin sulfide thin films for thermoelectric device applications

2020 ◽  
Vol 46 (18) ◽  
pp. 28342-28354
Author(s):  
K.V. Gunavathy ◽  
K. Tamilarasan ◽  
C. Rangasami ◽  
A.M.S. Arulanantham
Keyword(s):  
Thin Films ◽  
Thermoelectric Device ◽  
Tin Sulfide ◽  
Solution Processed ◽  
Copper Zinc Tin Sulfide ◽  
Device Applications ◽  
Copper Zinc

scholarly journals Imaging of local structures affecting electrical transport properties of large graphene sheets by lock-in thermography

2019 ◽  
Vol 5 (2) ◽  
pp. eaau3407 ◽  
Author(s):  
H. Nakajima ◽  
T. Morimoto ◽  
Y. Okigawa ◽  
T. Yamada ◽  
Y. Ikuta ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Chemical Vapor ◽  
Atomic Scale ◽  
Electrical Transport Properties ◽  
Large Area ◽  
Graphene Layers ◽  
Device Applications ◽  
Chemical Vapor Deposition Graphene ◽  
Lock In

The distribution of defects and dislocations in graphene layers has become a very important concern with regard to the electrical and electronic transport properties of device applications. Although several experiments have shown the influence of defects on the electrical properties of graphene, these studies were limited to measuring microscopic areas because of their long measurement times. Here, we successfully imaged various local defects in a large area of chemical vapor deposition graphene within a reasonable amount of time by using lock-in thermography (LIT). The differences in electrical resistance caused by the micrometer-scale defects, such as cracks and wrinkles, and atomic-scale domain boundaries were apparent as nonuniform Joule heating on polycrystalline and epitaxially grown graphene. The present results indicate that LIT can serve as a fast and effective method of evaluating the quality and uniformity of large graphene films for device applications.

Semiconductor Nanocrystals for Photovoltaic Devices

2016 ◽  
Vol 852 ◽  
pp. 935-938 ◽  
Author(s):  
Fen Qiao
Keyword(s):  
Transport Properties ◽  
Semiconductor Nanocrystals ◽  
Cost Effective ◽  
Organic Ligands ◽  
Photovoltaic Devices ◽  
Colloidal Semiconductor Nanocrystals ◽  
Optical And Electronic Properties ◽  
Tunnel Barriers ◽  
Device Applications ◽  
Colloidal Semiconductor

Recently, photovoltaic devices based on colloidal semiconductor nanocrystals (NCs) have attracted a great interest due to their flexible synthesis with tunable band gaps and shape-dependent optical and electronic properties. However, the surface of NCs typically presents long chain with electrically insulating organic ligands, which hinder the device applications for NCs. So the major challenge of NCs for photovoltaic devices application is to decrease the inter NC space and the height of the tunnel barriers among NCs, therefore increase the transport properties of NCs. In this article, recent development of colloidal semiconductor NCs and possible routes for improving transport properties of colloidal NCs were reviewed. Among those methods, the thermal annealing approach provides a simple and cost-effective way to fabricate superlattice and to decrease the inter-space among NCs, which may be used for the preparation of other nanocrystalline superstructure and functional devices.

Transport properties of the Mn-doped La214 system

1999 ◽  
Vol 12 (7) ◽  
pp. 417-420 ◽  
Author(s):  
G Xu ◽  
Z Mao ◽  
H Jin ◽  
H Yan ◽  
M Tian ◽  
...  
Keyword(s):  
Transport Properties ◽  
Mn Doped

Magnetic and electronic transport properties of Mn-doped silicon

2006 ◽  
Vol 140 (3-4) ◽  
pp. 192-196 ◽  
Author(s):  
S.B. Ma ◽  
Y.P. Sun ◽  
B.C. Zhao ◽  
P. Tong ◽  
X.B. Zhu ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Electronic Transport Properties ◽  
Doped Silicon ◽  
Mn Doped
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