scholarly journals Charge transport in functionalized multi-wall carbon nanotube-Nafion composite

2012 ◽  
Vol 112 (5) ◽  
pp. 053706 ◽  
Author(s):  
C. S. Suchand Sangeeth ◽  
R. Kannan ◽  
Vijayamohanan K. Pillai ◽  
Reghu Menon
NANO ◽  
2007 ◽  
Vol 02 (05) ◽  
pp. 285-294
Author(s):  
FU-REN F. FAN ◽  
BO CHEN ◽  
AUSTEN K. FLATT ◽  
JAMES M. TOUR ◽  
ALLEN J. BARD

We report here the current–voltage (i–V) characteristics of several (n++- Si /MNOPE/ C 60/ Pt -tip) or (n++- Si /MNOPE/SWCNT/ Pt -tip) junctions, where MNOPE = 2'-mononitro-4, 4'-bis(phenylethynyl)-1-phenylenediazonium and SWCNT = single wall carbon nanotube. A layer of C 60 or SWCNT-derivatized MNOPE has strong effect on the i–V behavior of the junctions, including rectification, negative differential resistance (NDR) and switching behaviors. The i–V curve of a grafted molecular monolayer (GMM) of MNOPE atop n++- Si shows NDR behavior, whereas those of C 60- and SWCNT-derivatized GMMs of MNOPE on n++- Si show strong rectifying behavior with opposite rectification polarities. With C 60, larger currents were found with negative tip bias, while with SWCNT, the forward top bias was positive. Because C 60 tends to be a good electron acceptor and SWCNTs tend to be good electron donors, they show different i–V behavior, as observed. Some of the (n++- Si /MNOPE/SWCNT/ Pt -tip) junctions also show reversible bistable switching behavior.


2003 ◽  
Vol 368 (3-4) ◽  
pp. 510
Author(s):  
Yuesheng Ning ◽  
Xiaobin Zhang ◽  
Youwen Wang ◽  
Yanlin Sun ◽  
Lihua Shen ◽  
...  

2007 ◽  
Vol 56 (4) ◽  
pp. 265-268 ◽  
Author(s):  
Ramasamy Sivakumar ◽  
Shuqi Guo ◽  
Toshiyuki Nishimura ◽  
Yutaka Kagawa

Carbon ◽  
2013 ◽  
Vol 54 ◽  
pp. 133-142 ◽  
Author(s):  
Renlong Gao ◽  
Sean M. Ramirez ◽  
David L. Inglefield ◽  
Robert J. Bodnar ◽  
Timothy E. Long

2009 ◽  
pp. NA-NA
Author(s):  
Petr Slobodian ◽  
Daniela Králová ◽  
Anežka Lengálová ◽  
Radko Novotný ◽  
Petr Sáha

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