scholarly journals Oscillatory regularity of charge carrier traps energy spectra in silicon organic polymer poly(di-n-hexylsilane)

2012 ◽  
Vol 38 (8) ◽  
pp. 740-744 ◽  
Author(s):  
A. Gumenjuk ◽  
N. Ostapenko ◽  
Yu. Ostapenko ◽  
O. Kerita ◽  
S. Suto ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Energy Spectra ◽  
Organic Polymer ◽  
Carrier Traps

Unusual features of charge carrier traps energy spectra in silicon organic polymers revealed by advanced TSL

2012 ◽  
Vol 394 (1) ◽  
pp. 36-39 ◽  
Author(s):  
A. Gumenyuk ◽  
N. Ostapenko ◽  
Yu. Ostapenko ◽  
O. Kerita ◽  
S. Suto
Keyword(s):  
Charge Carrier ◽  
Energy Spectra ◽  
Organic Polymers ◽  
Carrier Traps

scholarly journals Фотофизические свойства тонких пленок перилена, модифицированного функциональными группами диангидрида и диимида тетракарбоновой кислоты

2021 ◽  
Vol 63 (9) ◽  
pp. 1437
Author(s):  
А.С. Комолов ◽  
Э.Ф. Лазнева ◽  
Е.В. Жижин ◽  
Э.К. Алиджанов ◽  
Ю.Д. Лантух ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Band Gap ◽  
Charge Carrier Mobility ◽  
Dark Conductivity ◽  
Localized States ◽  
Semiconductor Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After ◽  
Carrier Traps

The morphology of organic semiconductor films of perylenetetracarboxylic acid dianhydride (PTCDA) and perylenetetracarboxylic acid dibenzyl-diimide (N, N`-DBPTCDI) formed by thermal vacuum deposition was studied by atomic force microscopy. It was shown that annealing of films at 420 K leads to rearrangement of their structure and crystallization. The optical absorption spectra of the films under study were used to estimate the optical band gap. The temperature dependence of the dark conductivity of PTCDA and N, N-DBPTCDI films before and after annealing (Т = 420 K) was established. The values of the activation energy of charge carrier traps are determined. The computer simulation of the density of localized states in the band gap of the films studied was carried out using the photoconductivity spectra in the constant photocurrent mode. Model photovoltaic cells based on PTCDA / СuPc and N, N-DBPTCDI / СuPc structures were formed. The kinetics of decay of the interfacial photo-voltage of the cells prepared was measured using pulsed light as an excitation source. On the basis of the performed measurements, the charge carrier mobility values in the investigated semiconductor materials were estimated.

Reversible Formation of Charge Carrier Traps in Poly(Phenylenevinylene) Derivative due to the Phototransformation of a Photochromic Additive

2005 ◽  
Vol 430 (1) ◽  
pp. 227-233 ◽  
Author(s):  
Martin Weiter ◽  
Martin Vala ◽  
Ota Salyk ◽  
Oldřich Zmeškal ◽  
Stanislav Nešpůrek ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Traps ◽  
Reversible Formation

Oscillator rule of the trap activation energies in NaCl crystals

Open Physics ◽  
2003 ◽  
Vol 1 (2) ◽  
Author(s):  
Arseniy Gumenjuk ◽  
Sergiy Kutovyi
Keyword(s):  
Activation Energy ◽  
Charge Carrier ◽  
Raman Spectra ◽  
Activation Energies ◽  
Energy Spectra ◽  
Vibration Level ◽  
Luminescence Centre ◽  
Single Oscillator ◽  
Excited Luminescence ◽  
Trap Activation

AbstractThe energy spectra of traps in NaCl crystals have been studied in detail by the method of thermoluminescence. Crystals of NaCl were undoped but treated thermally in different ways. The activation energies of traps form a single oscillator series, E n=ℏωTL(n+1/2), ℏωTL=903 cm-1. Contrary to other previously studied crystals with complex lattices, the corresponding line ℏωRam=ℏωTL was not found in Raman spectra of NaCl. It is assumed that the oscillator rule is governed by the polaron nature of traps. The trap activation energy is determined by the vibration level from which the transition of the charge carrier to the excited luminescence centre is made possible and depends on the distance between these centres.

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