Light emission lifetimes in p-type δ-doped GaAs/AlAs multiple quantum wells near the Mott transition

2012 ◽  
Vol 112 (4) ◽  
pp. 043105 ◽  
Author(s):  
J. Kundrotas ◽  
A. Čerškus ◽  
G. Valušis ◽  
L. H. Li ◽  
E. H. Linfield ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Mott Transition ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
P Type

Radiative recombination spectra of p-type δ-doped GaAs∕AlAs multiple quantum wells near the Mott transition

2008 ◽  
Vol 103 (12) ◽  
pp. 123108 ◽  
Author(s):  
J. Kundrotas ◽  
A. Čerškus ◽  
G. Valušis ◽  
M. Lachab ◽  
S. P. Khanna ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Mott Transition ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
P Type

Femtosecond intersubband dynamics of holes in p-type modulation-doped Si1−xGex/Si multiple quantum wells

2000 ◽  
Author(s):  
Robert A. Kaindl ◽  
Matthias Wurm ◽  
Klaus Reimann ◽  
Michael Woerner ◽  
Thomas Elsaesser ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
P Type

Reduced Recovery Time Semiconductor Optical Amplifier Using p-Type-Doped Multiple Quantum Wells

2006 ◽  
Vol 18 (22) ◽  
pp. 2323-2325 ◽  
Author(s):  
L. Zhang ◽  
I. Kang ◽  
A. Bhardwaj ◽  
N. Sauer ◽  
S. Cabot ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Semiconductor Optical Amplifier ◽  
Recovery Time ◽  
Optical Amplifier ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
P Type
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