Epitaxial growth and metal-insulator transition of vanadium oxide thin films with controllable phases

2012 ◽  
Vol 101 (7) ◽  
pp. 071902 ◽  
Author(s):  
Y. D. Ji ◽  
T. S. Pan ◽  
Z. Bi ◽  
W. Z. Liang ◽  
Y. Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Vanadium Oxide ◽  
Epitaxial Growth ◽  
Insulator Transition ◽  
Oxide Thin Films ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Vanadium Oxide Thin Films

Growth and physical properties of vanadium oxide thin films with controllable phases

2013 ◽  
Vol 1547 ◽  
pp. 21-27 ◽  
Author(s):  
Yanda Ji ◽  
Yin Zhang ◽  
Min Gao ◽  
Zhen Yuan ◽  
Changqing Jin ◽  
...  
Keyword(s):  
Thin Films ◽  
Physical Properties ◽  
Vanadium Oxide ◽  
Oxidation States ◽  
Energy Harvest ◽  
Oxide Thin Films ◽  
Metal Insulator ◽  
Solution Deposition ◽  
Vanadium Oxide Thin Films ◽  
Fabrication Parameters

ABSTRACTVanadium oxides thin films with variable oxidation states have attracted great attention due to their unique electrical, optical properties and many important applications in microelectronics, infrared optical devices, and energy harvest systems. However, to fabricate vanadium oxide thin films with controllable phases and desired transport properties is still a challenge by using a chemical solution deposition (CSD) technique. In this paper, we report that vanadium oxide thin films with well controlled phases such as rhombohedral V2O3 and monoclinic VO2 could be synthesized on Al2O3 (0001) substrates using a CSD technique ---- polymer assisted deposition (PAD). Both V2O3 and VO2 thin films can be well controlled with good epitaxial quality by optimizing the fabrication parameters. The electrical resistivity changes 3∼4 orders of magnitude at metal insulator transition for both epitaxial V2O3 and VO2 thin films. The correlation between the physical properties and the microstructures of the films will be discussed.

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