Mobility and screening effect in heavily doped accumulation-mode metal-oxide-semiconductor field-effect transistors

Ken-Ichi Goto; Tsung-Hsing Yu; Jeff Wu; Carlos H. Diaz; J. P. Colinge

doi:10.1063/1.4745604

Mobility and screening effect in heavily doped accumulation-mode metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.4745604 ◽

2012 ◽

Vol 101 (7) ◽

pp. 073503 ◽

Cited By ~ 38

Author(s):

Ken-Ichi Goto ◽

Tsung-Hsing Yu ◽

Jeff Wu ◽

Carlos H. Diaz ◽

J. P. Colinge

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Screening Effect ◽

Accumulation Mode ◽

Heavily Doped

Download Full-text

Performance Comparison of Ultrathin Fully Depleted Silicon-on-Insulator Inversion-, Intrinsic-, and Accumulation-Mode Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2668 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2668-2671 ◽

Cited By ~ 6

Author(s):

Rihito Kuroda ◽

Akinobu Teramoto ◽

Shigetoshi Sugawa ◽

Tadahiro Ohmi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Performance Comparison ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Accumulation Mode

Download Full-text

Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.094101 ◽

2011 ◽

Vol 50 (9R) ◽

pp. 094101 ◽

Cited By ~ 7

Author(s):

Naotoshi Kadotani ◽

Teruyuki Ohashi ◽

Tsunaki Takahashi ◽

Shunri Oda ◽

Ken Uchida

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Accumulation Mode

Download Full-text

Impact of Improved High-Performance Si(110)-Oriented Metal–Oxide–Semiconductor Field-Effect Transistors Using Accumulation-Mode Fully Depleted Silicon-on-Insulator Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3110 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3110-3116 ◽

Cited By ~ 39

Author(s):

Weitao Cheng ◽

Akinobu Teramoto ◽

Masaki Hirayama ◽

Shigetoshi Sugawa ◽

Tadahiro Ohmi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Accumulation Mode

Download Full-text

Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.094101 ◽

2011 ◽

Vol 50 (9) ◽

pp. 094101 ◽

Cited By ~ 5

Author(s):

Naotoshi Kadotani ◽

Teruyuki Ohashi ◽

Tsunaki Takahashi ◽

Shunri Oda ◽

Ken Uchida

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Accumulation Mode

Download Full-text

Hole Mobility in Accumulation Mode Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.04dc07 ◽

2012 ◽

Vol 51 (4S) ◽

pp. 04DC07 ◽

Cited By ~ 1

Author(s):

Philippe Gaubert ◽

Akinobu Teramoto ◽

Shigetoshi Sugawa ◽

Tadahiro Ohmi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Accumulation Mode

Download Full-text

Hole Mobility in Accumulation Mode Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.04dc07 ◽

2012 ◽

Vol 51 ◽

pp. 04DC07 ◽

Cited By ~ 6

Author(s):

Philippe Gaubert ◽

Akinobu Teramoto ◽

Shigetoshi Sugawa ◽

Tadahiro Ohmi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Accumulation Mode

Download Full-text

Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.4767353 ◽

2012 ◽

Vol 101 (21) ◽

pp. 213502 ◽

Cited By ~ 36

Author(s):

Tamara Rudenko ◽

Alexey Nazarov ◽

Isabelle Ferain ◽

Samaresh Das ◽

Ran Yu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Enhancement Effect ◽

Heavily Doped

Download Full-text

Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

Download Full-text

Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

Download Full-text

Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2019.8901832 ◽

2019 ◽

Author(s):

Ryosho Nakane ◽

Shoichi Sato ◽

Masaaki Tanaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

Download Full-text