Metal-induced solid-phase crystallization of amorphous TiO2 thin films

2012 ◽  
Vol 101 (5) ◽  
pp. 052101 ◽  
Author(s):  
Chang Yang ◽  
Yasushi Hirose ◽  
Shoichiro Nakao ◽  
Ngoc Lam Huong Hoang ◽  
Tetsuya Hasegawa
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Tio2 Thin Films ◽  
Solid Phase Crystallization ◽  
Amorphous Tio2

scholarly journals Strain effects on polycrystalline germanium thin films

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Toshifumi Imajo ◽  
Takashi Suemasu ◽  
Kaoru Toko
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Growth Promotion ◽  
Large Strain ◽  
Compressive Strain ◽  
Substrate Material ◽  
Large Crystal ◽  
Solid Phase Crystallization ◽  
Strain Effects ◽  
Thin Film Devices

AbstractPolycrystalline Ge thin films have attracted increasing attention because their hole mobilities exceed those of single-crystal Si wafers, while the process temperature is low. In this study, we investigate the strain effects on the crystal and electrical properties of polycrystalline Ge layers formed by solid-phase crystallization at 375 °C by modulating the substrate material. The strain of the Ge layers is in the range of approximately 0.5% (tensile) to -0.5% (compressive), which reflects both thermal expansion difference between Ge and substrate and phase transition of Ge from amorphous to crystalline. For both tensile and compressive strains, a large strain provides large crystal grains with sizes of approximately 10 μm owing to growth promotion. The potential barrier height of the grain boundary strongly depends on the strain and its direction. It is increased by tensile strain and decreased by compressive strain. These findings will be useful for the design of Ge-based thin-film devices on various materials for Internet-of-things technologies.

PECVD of amorphous TiO2 thin films: effect of growth temperature and plasma gas composition

2000 ◽  
Vol 371 (1-2) ◽  
pp. 126-131 ◽  
Author(s):  
G.A. Battiston ◽  
R. Gerbasi ◽  
A. Gregori ◽  
M. Porchia ◽  
S. Cattarin ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Temperature ◽  
Gas Composition ◽  
Tio2 Thin Films ◽  
Amorphous Tio2

A 9.5-in. 1.3-Mpixel low-temperature poly-Si TFT-LCD fabricated by solid-phase crystallization of very thin films and an ECR-CVD gate insulator

1993 ◽  
Vol 1 (2) ◽  
pp. 203 ◽  
Author(s):  
Thomas W. Little ◽  
Hideki Koike ◽  
Ken-ichi Takahara ◽  
Takashi Nakazawa ◽  
Hiroyuki Ohshima
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Solid Phase ◽  
Gate Insulator ◽  
Solid Phase Crystallization

Fabrication of porous and amorphous TiO2 thin films on flexible textile substrates

2015 ◽  
Vol 41 (7) ◽  
pp. 9177-9182 ◽  
Author(s):  
Dagang Miao ◽  
Huawen Hu ◽  
Aishu Li ◽  
Shouxiang Jiang ◽  
Songmin Shang
Keyword(s):  
Thin Films ◽  
Tio2 Thin Films ◽  
Amorphous Tio2

Contribution of thickness dependent void fraction and TiSixOy interlayer to the optical properties of amorphous TiO2 thin films

2013 ◽  
Vol 548 ◽  
pp. 275-279 ◽  
Author(s):  
Fan Zhang ◽  
Rong-Jun Zhang ◽  
Yu-Xiang Zheng ◽  
Zi-Jie Xu ◽  
Dong-Xu Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Void Fraction ◽  
Tio2 Thin Films ◽  
Amorphous Tio2
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