Understanding Si(111) solid phase epitaxial regrowth using Monte Carlo modeling: Bi-modal growth, defect formation, and interface topology

Ignacio Martin-Bragado; Benoit Sklenard

doi:10.1063/1.4739733

Understanding Si(111) solid phase epitaxial regrowth using Monte Carlo modeling: Bi-modal growth, defect formation, and interface topology

Journal of Applied Physics ◽

10.1063/1.4739733 ◽

2012 ◽

Vol 112 (2) ◽

pp. 024327 ◽

Cited By ~ 15

Author(s):

Ignacio Martin-Bragado ◽

Benoit Sklenard

Keyword(s):

Monte Carlo ◽

Defect Formation ◽

Solid Phase ◽

Growth Defect ◽

Monte Carlo Modeling ◽

Epitaxial Regrowth

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Monte-Carlo Modeling for Grain Growth Process in Vapor–Liquid–Solid Phase Sintered Materials

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2012.2207 ◽

2012 ◽

Vol 9 (9) ◽

pp. 1386-1390 ◽

Cited By ~ 1

Author(s):

Yuhong Zhao ◽

Hua Hou ◽

Yuhui Zhao

Keyword(s):

Monte Carlo ◽

Grain Growth ◽

Growth Process ◽

Solid Phase ◽

Vapor Liquid Solid ◽

Monte Carlo Modeling ◽

Sintered Materials ◽

Vapor Liquid

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Lattice kinetic Monte Carlo modeling of germanium solid phase epitaxial growth

physica status solidi (c) ◽

10.1002/pssc.201300159 ◽

2013 ◽

Vol 11 (1) ◽

pp. 93-96 ◽

Cited By ~ 1

Author(s):

J. L. Gomez-Selles ◽

B. L. Darby ◽

K. S. Jones ◽

I. Martin-Bragado

Keyword(s):

Monte Carlo ◽

Epitaxial Growth ◽

Solid Phase ◽

Kinetic Monte Carlo ◽

Monte Carlo Modeling

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{111} local configurations: The main source of silicon defects during solid phase epitaxial regrowth modeled by lattice kinetic Monte Carlo

Applied Physics Letters ◽

10.1063/1.3596466 ◽

2011 ◽

Vol 98 (23) ◽

pp. 233109 ◽

Cited By ~ 11

Author(s):

Ignacio Martin-Bragado

Keyword(s):

Monte Carlo ◽

Solid Phase ◽

Kinetic Monte Carlo ◽

Epitaxial Regrowth ◽

Silicon Defects

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The Effects of Rapid Recrystallization and Ion Implanted Carbon on The Solid Phase Epitaxial Regrowth of Si1−xGex Alloy Layers On Silicon

MRS Proceedings ◽

10.1557/proc-379-453 ◽

1995 ◽

Vol 379 ◽

Author(s):

M.J. Antonell ◽

T.E. Haynes ◽

K.S. Jones

Keyword(s):

Elevated Temperatures ◽

Defect Formation ◽

Solid Phase ◽

Growth Front ◽

Threading Dislocation ◽

Time Resolved ◽

Ion Channeling ◽

Epitaxial Regrowth ◽

Transmission Electron ◽

Threading Dislocation Density

ABSTRACTTransmission electron microscopy has been combined with time-resolved reflectivity and ion channeling to study the effects of regrowth temperature and carbon introduction by ion implantation on the solid phase epitaxial regrowth (SPER) of strained 2000Å, Sio.88Ge0.12/Si alloy films grown by molecular-beam epitaxy (MBE). Relative to the undoped layers, carbon incorporation in the MBE grown SiGe layers prior to regrowth at moderate temperatures (500- 700°C) has three main effects on SPER; these include a reduction in SPER rate, a delay in the onset of strain-relieving defect formation, and a sharpening of the amorphous-crystalline (a/c) interface, i.e., promotion of a two-dimensional (planar) growth front.1 Recrystallization of amorphized SiGe layers at higher temperatures (1 100°C) substantially modifies the defect structure in samples both with and without carbon. At these elevated temperatures threading dislocations extend completely to the Si/SiGe interface. Stacking faults are eliminated in the high temperature regrowth, and the threading dislocation density is slightly higher with carbon implantation.

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