Resistive switching by migration of hydrogen ions

2012 ◽  
Vol 101 (4) ◽  
pp. 043507 ◽  
Author(s):  
Akihiro Hanada ◽  
Kentaro Kinoshita ◽  
Satoru Kishida
Hyomen Kagaku ◽  
2014 ◽  
Vol 35 (7) ◽  
pp. 356-360
Author(s):  
Akihiro HANADA ◽  
Hiroki MIURA ◽  
Takeshi NOTSU ◽  
Hitoshi OSAWA ◽  
Toshiaki INA ◽  
...  

2019 ◽  
Vol 126 (5) ◽  
pp. 054303
Author(s):  
Gang Zhao ◽  
Yanling Yin ◽  
Yuehua Peng ◽  
Wenjun Yang ◽  
Yahui Liu ◽  
...  

2012 ◽  
Vol 27 (3) ◽  
pp. 323-326
Author(s):  
Zhen-Guo JI ◽  
Jun-Jie WANG ◽  
Qi-Nan MAO ◽  
Jun-Hua XI

2019 ◽  
Vol 9 (4) ◽  
pp. 486-493 ◽  
Author(s):  
S. Sahoo ◽  
P. Manoravi ◽  
S.R.S. Prabaharan

Introduction: Intrinsic resistive switching properties of Pt/TiO2-x/TiO2/Pt crossbar memory array has been examined using the crossbar (4×4) arrays fabricated by using DC/RF sputtering under specific conditions at room temperature. Materials and Methods: The growth of filament is envisaged from bottom electrode (BE) towards the top electrode (TE) by forming conducting nano-filaments across TiO2/TiO2-x bilayer stack. Non-linear pinched hysteresis curve (a signature of memristor) is evident from I-V plot measured using Pt/TiO2-x /TiO2/Pt bilayer device (a single cell amongst the 4×4 array is used). It is found that the observed I-V profile shows two distinguishable regions of switching symmetrically in both SET and RESET cycle. Distinguishable potential profiles are evident from I-V curve; in which region-1 relates to the electroformation prior to switching and region-2 shows the switching to ON state (LRS). It is observed that upon reversing the polarity, bipolar switching (set and reset) is evident from the facile symmetric pinched hysteresis profile. Obtaining such a facile switching is attributed to the desired composition of Titania layers i.e. the rutile TiO2 (stoichiometric) as the first layer obtained via controlled post annealing (650oC/1h) process onto which TiO2-x (anatase) is formed (350oC/1h). Results: These controlled processes adapted during the fabrication step help manipulate the desired potential barrier between metal (Pt) and TiO2 interface. Interestingly, this controlled process variation is found to be crucial for measuring the switching characteristics expected in Titania based memristor. In order to ensure the formation of rutile and anatase phases, XPS, XRD and HRSEM analyses have been carried out. Conclusion: Finally, the reliability of bilayer memristive structure is investigated by monitoring the retention (104 s) and endurance tests which ensured the reproducibility over 10,000 cycles.


1981 ◽  
Vol 46 (5) ◽  
pp. 1107-1115 ◽  
Author(s):  
Rolf Karlíček ◽  
Miroslav Polášek ◽  
Vladimír Jokl

The formation of N-carboxymethylaminoacetohydroxamic acid complexes in solutions with excess copper(II) or iron(III) ions or both of them was studied. In the presence of Cu(II), the binuclear complex Cu2H-1L+ was identified; in the ternary system, the complex CuFeH-1L+ was found. This complex formation is necessarily associated with the ligand structure >N-CH2.CO-NHOH and with a new property of hydroxamic acids of this type - detachment of two hydrogen ions from one carbohydroxamic functional group.


1997 ◽  
Vol 62 (11) ◽  
pp. 1730-1736 ◽  
Author(s):  
Petr Munk ◽  
Zdeněk Tuzar ◽  
Karel Procházka

When two electrolyte solutions are separated and only some of the ions can cross the boundary, the concentrations of these ions are different on both sides of the boundary. This is the well-known Donnan effect. When weak electrolytes are involved, the imbalance includes also hydrogen ions: there is a difference of pH across the boundary and the dissociation of nondiffusible weak electrolytes is suppressed. The effect is very pronounced when the concentration of the weak electrolyte is high and ionic strength is low. The significance of this phenomenon is discussed for polyelectrolyte solutions, and particularly for block copolymer micelles with weak polyelectrolyte shells. The effect is quite dramatic in the latter case.


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