Dipolar transformations of two-dimensional quantum dots arrays proven by electron energy loss spectroscopy

2012 ◽  
Vol 112 (2) ◽  
pp. 024105 ◽  
Author(s):  
R. E. Moctezuma ◽  
J. F. Nossa ◽  
A. Camacho ◽  
J. L. Carrillo ◽  
J. M. Rubí
2020 ◽  
Vol 6 (28) ◽  
pp. eabb4713
Author(s):  
Renwen Yu ◽  
F. Javier García de Abajo

We explore a disruptive approach to nanoscale sensing by performing electron energy loss spectroscopy through the use of low-energy ballistic electrons that propagate on a two-dimensional semiconductor. In analogy to free-space electron microscopy, we show that the presence of analyte molecules in the vicinity of the semiconductor produces substantial energy losses in the electrons, which can be resolved by energy-selective electron injection and detection through actively controlled potential gates. The infrared excitation spectra of the molecules are thereby gathered in this electronic device, enabling the identification of chemical species with high sensitivity. Our realistic theoretical calculations demonstrate the superiority of this technique for molecular sensing, capable of performing spectral identification at the zeptomol level within a microscopic all-electrical device.


2004 ◽  
Vol 10 (S02) ◽  
pp. 842-843
Author(s):  
Rolf Erni ◽  
Nigel D. Browning

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.


2013 ◽  
Vol 19 (S2) ◽  
pp. 1486-1487
Author(s):  
P.D. Nguyen ◽  
D.M. Kepaptsoglou ◽  
R. Erni ◽  
Q. Ramasse ◽  
A. Olsen

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.


1999 ◽  
Vol 5 (S2) ◽  
pp. 614-615
Author(s):  
R.R. Vanfleet ◽  
D. Muller ◽  
H.-J. Gossmann ◽  
J. Silcox

MBE techniques allow the fabrication of exceptionally sharp compositional changes such as delta doped layers in semiconductors. Producing these spatially confined doped layers is critical to many innovative device designs. The spatial confinement of these delta doped structures can be less than the measurement resolution of the currently standard SIMS and RBS techniques. This allows only the upper limits on the layer width to be measured. These SIMS and RBS methods are also inadequate for the two dimensional information desired for future device design and development. More recently developed techniques such as Scanning Capacitance Microscopy and spreading resistance measurement give two dimensional information but have similar spatial resolution issues. The Z-contrast nature of Annular Dark Field (ADF) imaging with the complimentary technique of Electron Energy Loss Spectroscopy (EELS) in the Scanning Transmission Electron Microscope (STEM) shows promise for two dimensional dopant profiling with spatial resolution on the atomic scale.


2016 ◽  
Vol 120 (20) ◽  
pp. 11170-11179 ◽  
Author(s):  
Kulpreet S. Virdi ◽  
Yaron Kauffmann ◽  
Christian Ziegler ◽  
Pirmin Ganter ◽  
Peter Blaha ◽  
...  

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