Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy

Y. Zhu; N. Jain; S. Vijayaraghavan; D. K. Mohata; S. Datta; D. Lubyshev; J. M. Fastenau; W. K. Liu; N. Monsegue; M. K. Hudait

doi:10.1063/1.4737462

Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy

Journal of Applied Physics ◽

10.1063/1.4737462 ◽

2012 ◽

Vol 112 (2) ◽

pp. 024306 ◽

Cited By ~ 24

Author(s):

Y. Zhu ◽

N. Jain ◽

S. Vijayaraghavan ◽

D. K. Mohata ◽

S. Datta ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Structural, morphological, and defect properties of metamorphic In0.7Ga0.3As/GaAs0.35Sb0.65 p-type tunnel field effect transistor structure grown by molecular beam epitaxy

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4812793 ◽

2013 ◽

Vol 31 (4) ◽

pp. 041203 ◽

Cited By ~ 8

Author(s):

Yan Zhu ◽

Mantu K. Hudait ◽

Dheeraj K. Mohata ◽

Bijesh Rajamohanan ◽

Suman Datta ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Transistor Structure ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

P Type

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n-AlInAs/(InAs)3(GaAs)1 superlattice modulation-doped field effect transistor grown by molecular beam epitaxy

Electronics Letters ◽

10.1049/el:19900578 ◽

1990 ◽

Vol 26 (13) ◽

pp. 885 ◽

Cited By ~ 4

Author(s):

N. Nishiyama ◽

H. Yana ◽

S. Nakajima ◽

H. Hayashi

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Effect Transistor

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Novel carbon‐dopedp‐channel GaAs metal‐semiconductor field‐effect transistor grown by metalorganic molecular beam epitaxy

Journal of Applied Physics ◽

10.1063/1.349357 ◽

1991 ◽

Vol 70 (5) ◽

pp. 2885-2886 ◽

Cited By ~ 5

Author(s):

F. Ren ◽

C. R. Abernathy ◽

S. J. Pearton

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Metalorganic Molecular Beam Epitaxy ◽

Effect Transistor

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Low‐noise GaAs field‐effect transistor made by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.93632 ◽

1982 ◽

Vol 41 (7) ◽

pp. 633-635 ◽

Cited By ~ 5

Author(s):

M. Feng ◽

V. K. Eu ◽

I. J. D’Haenens ◽

M. Braunstein

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Low Noise ◽

Effect Transistor

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A self-aligned In0.53Ga0.47As junction field-effect transistor grown by molecular beam epitaxy

IEEE Electron Device Letters ◽

10.1109/edl.1984.25919 ◽

1984 ◽

Vol 5 (7) ◽

pp. 285-287 ◽

Cited By ~ 10

Author(s):

D. Wake ◽

A.W. Livingstone ◽

D.A. Andrews ◽

G.J. Davies

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Effect Transistor

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Monolithic integration of a photodiode and a field‐effect transistor on a GaAs substrate by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.93946 ◽

1983 ◽

Vol 42 (4) ◽

pp. 380-382 ◽

Cited By ~ 22

Author(s):

O. Wada ◽

S. Miura ◽

M. Ito ◽

T. Fujii ◽

T. Sakurai ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Gaas Substrate ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Monolithic Integration ◽

Effect Transistor

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Atomic layer doped field‐effect transistor fabricated using Si molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.101263 ◽

1989 ◽

Vol 54 (19) ◽

pp. 1869-1871 ◽

Cited By ~ 43

Author(s):

Kiyokazu Nakagawa ◽

Aart A. van Gorkum ◽

Yasuhiro Shiraki

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Atomic Layer ◽

Effect Transistor

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A novel, very high breakdown voltage, field effect transistor prepared by molecular beam epitaxy

Thin Solid Films ◽

10.1016/0040-6090(91)90252-s ◽

1991 ◽

Vol 195 (1-2) ◽

pp. 1-6 ◽

Cited By ~ 2

Author(s):

W.C. Liu ◽

W.S. Lour ◽

C.Y. Sun ◽

H.R. Chen

Keyword(s):

Molecular Beam Epitaxy ◽

Breakdown Voltage ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

High Breakdown Voltage ◽

Effect Transistor ◽

Very High

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Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80 nm) Si[sub 1−x]Ge[sub x] step-graded buffer layers for high-κ III-V metal-oxide-semiconductor field effect transistor applications

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2713119 ◽

2007 ◽

Vol 25 (3) ◽

pp. 1098 ◽

Cited By ~ 13

Author(s):

Michael M. Oye ◽

Davood Shahrjerdi ◽

Injo Ok ◽

Jeffrey B. Hurst ◽

Shannon D. Lewis ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Buffer Layers ◽

Oxide Semiconductor ◽

Molecular Beam Epitaxy Growth ◽

Silicon Substrates ◽

Effect Transistor

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Gain control operation of a four-terminal p-n-p In0.53Ga0.47As/InP junction field-effect transistor grown by molecular-beam epitaxy

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1986.22560 ◽

1986 ◽

Vol 33 (6) ◽

pp. 725-729

Author(s):

J. Cheng ◽

S.R. Forrest ◽

G. Guth ◽

R. Wunder

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Gain Control ◽

Control Operation ◽

Effect Transistor

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