Interplay between magnetic order and electrical resistivity in local moment manganites

2012 ◽  
Author(s):  
L. Haritha ◽  
G. Gangadhar Reddy ◽  
A. Ramakanth ◽  
S. K. Ghatak
Keyword(s):  
Electrical Resistivity ◽  
Magnetic Order ◽  
Local Moment

Influence Of Magnetic Order On Structural Distortion In Local Moment Systems

2011 ◽  
Author(s):  
L. Haritha ◽  
G. Gangadhar Reddy ◽  
A. Ramakanth ◽  
Amitabha Ghoshray ◽  
Bilwadal Bandyopadhyay ◽  
...  
Keyword(s):  
Magnetic Order ◽  
Structural Distortion ◽  
Local Moment

HALL EFFECT, THERMOPOWER AND ELECTRICAL RESISTIVITY OF DOPED RuSr2GdCu2O8 SYSTEM

2004 ◽  
Vol 18 (22) ◽  
pp. 3057-3062 ◽  
Author(s):  
G. ILONCA ◽  
F. BEIUSAN ◽  
A. V. POP ◽  
I. MATEI ◽  
E. MACOCIAN ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Hall Effect ◽  
Magnetic Order ◽  
Band Model ◽  
Solid State Reaction Technique ◽  
Sintered Ceramic ◽  
Ceramic Samples ◽  
Sb Doping ◽  
Two Band Model ◽  
Hole Localization

Polycrystalline samples of Ru 1-x Sb x Sr 2 GdCuO 8 doped with Sb , in which magnetic order and superconductivity coexist with T magnetic ≫T c , were prepared by a solid state reaction technique. Lattice parameters, electrical resistivity, Hall and thermopower coefficients measurements on the same sintered ceramic samples are presented. Both Hall effect and thermopower show anomalous decreases below T magnetic which might be explained with a simple two-band model in the RuO 2 layer at T magnetic . It was also observed that the Sb doping reduce the conductivity of the system and the transition temperature decreases with increasing Sb content. This may be due to a distortion of RuO 6 octahedra which is responsible for the increase of hole localization.

TRANSPORT PROPERTIES OF Mn2−xCoxSb (x≤0.30)

1993 ◽  
Vol 07 (01n03) ◽  
pp. 879-882
Author(s):  
T. HARADA ◽  
Y. HASEBE ◽  
S. MORI ◽  
K. NISHIMURA ◽  
T. KANOMATA ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Band Structure ◽  
Transport Properties ◽  
Thermoelectric Power ◽  
Magnetic Order ◽  
Abrupt Change ◽  
Order Transition ◽  
Paramagnetic Region

The electrical resistivity ρ and the thermoelectric power S of Mn2−xCoxSb(x≦0.3) are studied. The abrupt change of ρ and S (0<x) appears near the temperature of magnetic order-order transition. S of Mn2–xCoxSb (0≦x≦0.3) is positive in the ferrimagnetic region and negative in the paramagnetic region. we have discussed these behaviour of ρ and S on the basis of the band structure of Mn2sb.

TRANSPORT PROPERTIES OF Mn3−xCoxGaC (x≤0.12)

1993 ◽  
Vol 07 (01n03) ◽  
pp. 875-878 ◽  
Author(s):  
T. KANOMATA ◽  
H. HARADA ◽  
T. KANEKO
Keyword(s):  
Electrical Resistivity ◽  
Phase Transitions ◽  
Transport Properties ◽  
Thermoelectric Power ◽  
Magnetic Order ◽  
Magnetic Phase ◽  
Order Transition ◽  
Experimental Results ◽  
Magnetic Phase Transitions ◽  
Itinerant Electron

The electrical resistivity p and the thermoelectric power S of Mn3–xCoxGaC(x≤0.12) are studied to investigate the mechanism of the magnetic order-order transition. The ρ-T curves for samples with 0<x≤0.06 show the appearence of an intermediate magnetic phase. The experimental results suggest that the magnetic phase transitions of Mn3−xCoxGaC should be discussed in terms of itinerant electron magnetism.

Magnetic order, phase transitions and electrical resistivity of Ho7Rh3 single crystals

2016 ◽  
Vol 654 ◽  
pp. 126-132 ◽  
Author(s):  
Takanori Tsutaoka ◽  
Keisuke Obata ◽  
Andrey A. Sherstobitov ◽  
Evgeny G. Gerasimov ◽  
Pavel B. Terentev ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Phase Transitions ◽  
Single Crystals ◽  
Magnetic Order

Electrical resistivity and local magnetic order in random anisotropy amorphous ferromagnets

1994 ◽  
Vol 75 (10) ◽  
pp. 6513-6515
Author(s):  
V. S. Amaral ◽  
J. B. Sousa ◽  
J. M. Moreira ◽  
B. Barbara ◽  
J. Filippi
Keyword(s):  
Electrical Resistivity ◽  
Magnetic Order ◽  
Random Anisotropy ◽  
Amorphous Ferromagnets

ELECTRONIC PROPERTIES OF UCo4B

1993 ◽  
Vol 07 (01n03) ◽  
pp. 838-841 ◽  
Author(s):  
H. NAKOTTE ◽  
L. HAVELA ◽  
J.P. KUANG ◽  
F.R. DE BOER ◽  
K.H.J. BUSCHOW ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Specific Heat ◽  
High Field ◽  
Magnetic Order ◽  
Spin Fluctuations ◽  
Clear Indication ◽  
Resistivity Measurements ◽  
Range Magnetic Order ◽  
High Field Magnetization ◽  
Long Range Magnetic Order

We present susceptibility, high-field magnetization, specific-heat and electrical-resistivity measurements on UCo4B. The magnetic susceptibility passes a maximum in both its temperature and its field dependence. We attribute these maxima to spin fluctuations, as there is no clear indication for a long-range magnetic order in the observed temperature range. Strong evidence for the occurrence of spin fluctuations is also given by the specific-heat measurements, whereas the electrical resistivity displays a more normal metallic behaviour.

In-situ electrical-resistivity measurements in the high-voltage electron microscope

1978 ◽  
Vol 36 (1) ◽  
pp. 68-69
Author(s):  
W. E. King
Keyword(s):  
Electrical Resistivity ◽  
Electron Microscope ◽  
High Voltage ◽  
Resistivity Measurements ◽  
Voltage Electron ◽  
High Voltage Electron Microscope ◽  
High Voltage Electron ◽  
Wide Range ◽  
Helium Gas

A side-entry type, helium-temperature specimen stage that has the capability of in-situ electrical-resistivity measurements has been designed and developed for use in the AEI-EM7 1200-kV electron microscope at Argonne National Laboratory. The electrical-resistivity measurements complement the high-voltage electron microscope (HVEM) to yield a unique opportunity to investigate defect production in metals by electron irradiation over a wide range of defect concentrations.A flow cryostat that uses helium gas as a coolant is employed to attain and maintain any specified temperature between 10 and 300 K. The helium gas coolant eliminates the vibrations that arise from boiling liquid helium and the temperature instabilities due to alternating heat-transfer mechanisms in the two-phase temperature regime (4.215 K). Figure 1 shows a schematic view of the liquid/gaseous helium transfer system. A liquid-gas mixture can be used for fast cooldown. The cold tip of the transfer tube is inserted coincident with the tilt axis of the specimen stage, and the end of the coolant flow tube is positioned without contact within the heat exchanger of the copper specimen block (Fig. 2).

The stabilization of B.C.C. Cu in Cu/Nb nanolayered composites

1996 ◽  
Vol 54 ◽  
pp. 228-229
Author(s):  
H. Kung ◽  
A.J. Griffin ◽  
Y.C. Lu ◽  
K.E. Sickafus ◽  
T.E. Mitchell ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Layer Thickness ◽  
Volume Fraction ◽  
Ion Beam ◽  
High Strength ◽  
Cross Sectional ◽  
Metastable Structure ◽  
High Resolution Tem ◽  
Potential Improvement ◽  
Two Phases

Materials with compositionally modulated structures have gained much attention recently due to potential improvement in electrical, magnetic and mechanical properties. Specifically, Cu-Nb laminate systems have been extensively studied mainly due to the combination of high strength, and superior thermal and electrical conductivity that can be obtained and optimized for the different applications. The effect of layer thickness on the hardness, residual stress and electrical resistivity has been investigated. In general, increases in hardness and electrical resistivity have been observed with decreasing layer thickness. In addition, reduction in structural scale has caused the formation of a metastable structure which exhibits uniquely different properties. In this study, we report the formation of b.c.c. Cu in highly textured Cu/Nb nanolayers. A series of Cu/Nb nanolayered films, with alternating Cu and Nb layers, were prepared by dc magnetron sputtering onto Si {100} wafers. The nominal total thickness of each layered film was 1 μm. The layer thickness was varied between 1 nm and 500 nm with the volume fraction of the two phases kept constant at 50%. The deposition rates and film densities were determined through a combination of profilometry and ion beam analysis techniques. Cross-sectional transmission electron microscopy (XTEM) was used to examine the structure, phase and grain size distribution of the as-sputtered films. A JEOL 3000F high resolution TEM was used to characterize the microstructure.

Chemical structure of diamond-like carbon thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 710-711
Author(s):  
N.-H. Cho ◽  
K.M. Krishnan ◽  
D.B. Bogy
Keyword(s):  
Electrical Resistivity ◽  
Chemical Structure ◽  
Diamond Like Carbon ◽  
Chemical Structures ◽  
Sputtering Power ◽  
Data Aquisition ◽  
Equilibrium Phases ◽  
Electron Energy Loss ◽  
Power Densities ◽  
Preparation Techniques

Diamond-like carbon (DLC) films have attracted much attention due to their useful properties and applications. These properties are quite variable depending on film preparation techniques and conditions, DLC is a metastable state formed from highly non-equilibrium phases during the condensation of ionized particles. The nature of the films is therefore strongly dependent on their particular chemical structures. In this study, electron energy loss spectroscopy (EELS) was used to investigate how the chemical bonding configurations of DLC films vary as a function of sputtering power densities. The electrical resistivity of the films was determined, and related to their chemical structure.DLC films with a thickness of about 300Å were prepared at 0.1, 1.1, 2.1, and 10.0 watts/cm2, respectively, on NaCl substrates by d.c. magnetron sputtering. EEL spectra were obtained from diamond, graphite, and the films using a JEOL 200 CX electron microscope operating at 200 kV. A Gatan parallel EEL spectrometer and a Kevex data aquisition system were used to analyze the energy distribution of transmitted electrons. The electrical resistivity of the films was measured by the four point probe method.

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