Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry

2012 ◽  
Vol 112 (2) ◽  
pp. 024502 ◽  
Author(s):  
Keiko Kouda ◽  
Yasuto Hijikata ◽  
Shuhei Yagi ◽  
Hiroyuki Yaguchi ◽  
Sadafumi Yoshida
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Spectroscopic Ellipsometry ◽  
Pressure Dependence ◽  
Oxidation Process

Oxygen partial pressure dependence of in situ X-ray absorption spectroscopy at the Co and Fe K edges for (La0.6Sr0.4)(Co0.2Fe0.8)O3−δ

2012 ◽  
Vol 152 (4) ◽  
pp. 278-283 ◽  
Author(s):  
Takanori Itoh ◽  
Saori Shirasaki ◽  
Hironori Ofuchi ◽  
Sayaka Hirayama ◽  
Tetsuo Honma ◽  
...  
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Absorption Spectroscopy ◽  
Pressure Dependence ◽  
X Ray ◽  
X Ray Absorption

Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In Situ Spectroscopic Ellipsometry

2008 ◽  
Vol 600-603 ◽  
pp. 667-670 ◽  
Author(s):  
Takeshi Yamamoto ◽  
Yasuto Hijikata ◽  
Hiroyuki Yaguchi ◽  
Sadafumi Yoshida
Keyword(s):  
Growth Rate ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pressure Dependence ◽  
Oxidation Rate ◽  
Pressure Range ◽  
Empirical Relation ◽  
Oxide Thickness ◽  
Oxide Growth

Real time observations of SiC (000–1) C-face and (0001) Si-face oxidation were performed using an in-situ ellipsometer over the oxygen-partial-pressure range from 0.1 to 1.0 atm. We analyzed the relations between oxide growth rate and oxide thickness by applying an empirical relation proposed by Massoud et al. We found the occurrence of oxidation enhancement in the thin oxide regime also for Si-face as well as for C-face. We have discussed the oxygen-partial-pressure dependence of the oxidation rate constants between SiC C- and Si face, comparing with that of Si.

Characterization of YBa2Cu4O8 high temperature electrical properties and thermodynamic stability

1991 ◽  
Vol 6 (10) ◽  
pp. 2054-2058 ◽  
Author(s):  
B-S. Hong ◽  
T.O. Mason
Keyword(s):  
High Temperature ◽  
Electrical Property ◽  
Electrical Properties ◽  
Seebeck Coefficient ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pressure Range ◽  
Stability Range

Via in situ electrical property measurements (conductivity, Seebeck coefficient) over the temperature range 500–800 °C and oxygen partial pressure range 10−4-1 atm, the equilibrium transport properties and stability range of YBa2Cu4O8 were determined. YBa2Cu4O8 behaves like the intrinsically mixed-valent compound, magnetite (Fe3O4), with small variations in electrical properties with changes in oxygen partial pressure. The decomposition boundary to YBa2Cu3O6+y (or YBa2Cu3.5O7.5±z) and CuO occurs at log(po2, atm) = −1.24 × 104/T(K) + 11.01(773 ⋚ T(K) ⋚ 1073).

Influences of oxygen impurity contained in nitrogen gas on the reactions of chromium with nitrogen

2005 ◽  
Vol 20 (10) ◽  
pp. 2745-2753 ◽  
Author(s):  
Yung-Shou Ho ◽  
Fong-Shung Huang ◽  
Fu-Hsing Lu
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Oxygen Impurity ◽  
Nitrogen Gas ◽  
Available Nitrogen ◽  
Increasing Temperature ◽  
Pressure Changes ◽  
Annealing Experiments ◽  
Simultaneous Dissolution

In this research, the influences of the oxygen impurity contained in the commercially available nitrogen gas on the reactions of chromium pellets with nitrogen were investigated in the temperature range 600–1350 °C. A small amount of oxygen competed with the majority N2 to react with chromium in the annealing process. Analyzing the in situ oxygen partial pressure changes during annealing proved that the dissolution of oxygen in Cr and/or resultant CrxN (CrN or Cr2N) was exothermic and the solubility decreased with increasing temperature. It was found that the oxygen partial pressure decreased drastically to about 10−22 atm when specimens were annealed at 600 °C compared to a mere 10−5 atm for a blank test, while its value increased with temperature. The oxidation involved simultaneous dissolution of oxygen in specimens and formation of oxide scale. Moreover, comparing the aforementioned results with those obtained from additional annealing experiments preformed in argon gas showed that the formation of Cr2O3 might stem mainly from oxidation of the resultant nitrides instead of the metallic chromium.

Mutual conversion of (BiPb)2Sr2Ca n−1Cu n O x HTSCs with n=1, 2, 3: Temperature and oxygen partial-pressure dependence

1994 ◽  
Vol 16 (10-11) ◽  
pp. 1701-1708
Author(s):  
F. Cellucci ◽  
D. Gozzi ◽  
R. Martino ◽  
S. Orlando ◽  
M. Tomellini
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pressure Dependence ◽  
Mutual Conversion
Sign in / Sign up

Export Citation Format

Share Document