scholarly journals Publisher’s Note: “Evolution of self-assembled type-II ZnTe/ZnSe nanostructures: Structural and electronic properties” [J. Appl. Phys. 111, 093524 (2012)]

2012 ◽  
Vol 112 (1) ◽  
pp. 019902
Author(s):  
S. J. Kim ◽  
B.-C. Juang ◽  
W. Wang ◽  
J. R. Jokisaari ◽  
C.-Y. Chen ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Type Ii ◽  
Structural And Electronic Properties ◽  
Self Assembled

Evolution of self-assembled type-II ZnTe/ZnSe nanostructures: Structural and electronic properties

2012 ◽  
Vol 111 (9) ◽  
pp. 093524 ◽  
Author(s):  
S. J. Kim ◽  
B.-C. Juang ◽  
W. Wang ◽  
J. R. Jokisaari ◽  
C.-Y. Chen ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Type Ii ◽  
Structural And Electronic Properties ◽  
Self Assembled

scholarly journals Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots

2012 ◽  
Vol 86 (3) ◽  
Author(s):  
T. Nowozin ◽  
A. Marent ◽  
L. Bonato ◽  
A. Schliwa ◽  
D. Bimberg ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electronic Properties ◽  
High Purity ◽  
Structural And Electronic Properties ◽  
Self Assembled

Study of structural and electronic properties of (ZnSeZB)m/(ZnSeWZ)n superlattices based on HSE hybrid functional

2019 ◽  
Vol 33 (23) ◽  
pp. 1950269
Author(s):  
Jia-Hong Lin ◽  
Xiong-Tao Yang ◽  
Bing-Suo Zou ◽  
Li-Jie Shi
Keyword(s):  
Solar Energy ◽  
Electronic Properties ◽  
First Principles ◽  
Band Alignment ◽  
Good Prediction ◽  
Type Ii ◽  
Carrier Localization ◽  
Hybrid Functional ◽  
Zinc Blende ◽  
Structural And Electronic Properties

Using first-principles method, we studied systematically the structural and electronic properties of ZB/WZ superlattices of ZnSe. The band offsets are calculated by Heyd–Scuseria–Ernzerhof (HSE) hybrid functional which can give a good prediction on the relative band positions. The band alignment at ZB/WZ interface is found to be type-II with holes localized in wurtzite region and electrons in zinc-blende region, which is suitable for optoelectronic and solar energy conversion. The origin of type-II character and the carrier localization are investigated in detail.

scholarly journals Tunable Electronic Properties of Type-II SiS2/WSe2 Hetero-Bilayers

Nanomaterials ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 2037
Author(s):  
Yue Guan ◽  
Xiaodan Li ◽  
Ruixia Niu ◽  
Ningxia Zhang ◽  
Taotao Hu ◽  
...  
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Density Functional ◽  
Photogenerated Electron ◽  
Strain Range ◽  
Band Alignment ◽  
Type Ii ◽  
Electron Hole ◽  
Structural And Electronic Properties ◽  
Indirect Band Gap

First-principle calculations based on the density functional theory (DFT) are implemented to study the structural and electronic properties of the SiS2/WSe2 hetero-bilayers. It is found that the AB-2 stacking model is most stable among all the six SiS2/WSe2 heterostructures considered in this work. The AB-2 stacking SiS2/WSe2 hetero-bilayer possesses a type-II band alignment with a narrow indirect band gap (0.154 eV and 0.738 eV obtained by GGA-PBE and HSE06, respectively), which can effectively separate the photogenerated electron–hole pairs and prevent the recombination of the electron–hole pairs. Our results revealed that the band gap can be tuned effectively within the range of elastic deformation (biaxial strain range from −7% to 7%) while maintaining the type-II band alignment. Furthermore, due to the effective regulation of interlayer charge transfer, the band gap along with the band offset of the SiS2/WSe2 heterostructure can also be modulated effectively by applying a vertical external electric field. Our results offer interesting alternatives for the engineering of two-dimensional material-based optoelectronic nanodevices.

scholarly journals Colloidal synthesis and optical properties of type-II CdSe–CdTe and inverted CdTe–CdSe core–wing heteronanoplatelets

Nanoscale ◽  
2015 ◽  
Vol 7 (17) ◽  
pp. 8084-8092 ◽  
Author(s):  
A. V. Antanovich ◽  
A. V. Prudnikau ◽  
D. Melnikau ◽  
Y. P. Rakovich ◽  
A. Chuvilin ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electronic Properties ◽  
Colloidal Synthesis ◽  
Type Ii ◽  
Cdse Core ◽  
Structural And Electronic Properties

We developed colloidal synthesis to investigate the structural and electronic properties of CdSe–CdTe and inverted CdTe–CdSe heteronanoplatelets.

Fe2O3/Cu2O heterostructured nanocrystals

2014 ◽  
Vol 2 (22) ◽  
pp. 8525-8533 ◽  
Author(s):  
Peter Mirtchev ◽  
Kristine Liao ◽  
Elizabeth Jaluague ◽  
Qiao Qiao ◽  
Yao Tian ◽  
...  
Keyword(s):  
Solar Energy ◽  
Energy Conversion ◽  
Electronic Properties ◽  
Photoelectron Spectroscopy ◽  
Band Alignment ◽  
Solution Phase ◽  
Type Ii ◽  
Seeded Growth ◽  
Structural And Electronic Properties ◽  
Growth Approach

We report the synthesis of colloidal γ-Fe2O3/Cu2O hetero-nanocrystals (HNCs) using a solution-phase seeded-growth approach. The structural and electronic properties of these materials are investigated by HRTEM and photoelectron spectroscopy. A type II band alignment was found between the p-Cu2O and n-Fe2O3 domains making the particles potentially attractive candidates for applications in solar energy conversion.

Structural and electronic properties of C60 fullerene network self-assembled on metal-covered semiconductor surfaces

2021 ◽  
Vol 154 (10) ◽  
pp. 104703
Author(s):  
A. N. Mihalyuk ◽  
T. V. Utas ◽  
S. V. Eremeev ◽  
C. R. Hsing ◽  
C. M. Wei ◽  
...  
Keyword(s):  
Electronic Properties ◽  
C60 Fullerene ◽  
Semiconductor Surfaces ◽  
Structural And Electronic Properties ◽  
Self Assembled

Investigation of the V4+-Centre in 6H- and 4H-SIC by the Method of Spectral-Hole Burning

1998 ◽  
Vol 512 ◽  
Author(s):  
C. Hecht ◽  
R. Kummer ◽  
A. Winnacker
Keyword(s):  
Electronic Properties ◽  
Room Temperature ◽  
Hole Burning ◽  
Band Offset ◽  
Spectral Hole Burning ◽  
Type Ii ◽  
Thermally Stable ◽  
Spectral Hole

ABSTRACTIn the context of spectral-hole burning experiments in 4H- and 6H-SiC doped with vanadium the energy positions of the V4+/5+ level in both polytypes were determined in order to resolve discrepancies in literature. From these numbers the band offset of 6H/4H-SiC is calculated by using the Langer-Heinrich rule, and found to be of staggered type II. Furthermore the experiments show that thermally stable electronic traps exist in both polytypes at room temperature and considerably above, which may result in longtime transient shifts of electronic properties.

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