An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of InGaN based light-emitting diodes

2012 ◽  
Vol 112 (2) ◽  
pp. 023107 ◽  
Author(s):  
Jiaxing Wang ◽  
Lai Wang ◽  
Lei Wang ◽  
Zhibiao Hao ◽  
Yi Luo ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Efficiency Droop ◽  
Carrier Rate ◽  
Rate Model ◽  
Light Emitting

scholarly journals Effect of Trapezoidal-Shaped Well on Efficiency Droop in InGaN-Based Double-Heterostructure Light-Emitting Diodes

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Ray-Ming Lin ◽  
Mu-Jen Lai ◽  
Liann-Be Chang ◽  
Chou-Hsiung Huang ◽  
Chang-Ho Chen
Keyword(s):  
Quantum Efficiency ◽  
Current Density ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Well Being ◽  
Efficiency Droop ◽  
Maximum Efficiency ◽  
Light Emitting ◽  
Double Heterostructure ◽  
Current Densities

We investigated the effects of different well shapes on the external quantum efficiency (EQE) and the efficiency droop in wide-well InGaN/GaN double-heterostructure light-emitting diodes. For forward current densities in the measurement range of greater than 135 A/cm2, the device featuring a trapezoidal well exhibited improved EQEs and alleviative efficiency droop, relative to those of the device featuring a rectangular well. The decreased Auger loss has been proposed as the main reason for the greater maximum efficiency that occurred at high current density (>50 A/cm2). For the devices incorporating trapezoidal and rectangular wells, the EQEs at 200 A/cm2decreased by 14 and 40%, respectively, from their maximum values, resulting in the EQE at a current density of 200 A/cm2of the device featuring a trapezoidal well being 17.5% greater than that featuring a rectangular well. These results suggest that, in addition to the decreased Auger loss, the alleviation in efficiency droop at higher current densities might be due to higher internal quantum efficiency resulted from the improved carrier injection efficiency of the trapezoidal well.

Perovskite Light‐Emitting Diodes with Near Unit Internal Quantum Efficiency at Low Temperatures

2021 ◽  
Vol 33 (14) ◽  
pp. 2006302
Author(s):  
Yarong He ◽  
Jiaxu Yan ◽  
Lei Xu ◽  
Bangmin Zhang ◽  
Qian Cheng ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Low Temperatures ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Light Emitting

scholarly journals Temperature-Dependent Internal Quantum Efficiency of Blue High-Brightness Light-Emitting Diodes

2014 ◽  
Vol 50 (11) ◽  
pp. 911-920 ◽  
Author(s):  
Ilya E. Titkov ◽  
Sergey Yu. Karpov ◽  
Amit Yadav ◽  
Vera L. Zerova ◽  
Modestas Zulonas ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Temperature Dependent ◽  
High Brightness ◽  
Light Emitting

Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes

2003 ◽  
Vol 83 (24) ◽  
pp. 4906-4908 ◽  
Author(s):  
Satoshi Watanabe ◽  
Norihide Yamada ◽  
Masakazu Nagashima ◽  
Yusuke Ueki ◽  
Chiharu Sasaki ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Light Emitting ◽  
Highly Efficient ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

Estimating internal quantum efficiency of light-emitting diodes from current–voltage curves

2019 ◽  
Vol 12 (3) ◽  
pp. 032002 ◽  
Author(s):  
Chenziyi Mi ◽  
Lai Wang ◽  
Jie Jin ◽  
Zhibiao Hao ◽  
Yi Luo ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Light Emitting ◽  
Current Voltage
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