Formation of CdSe/CdTe quantum dots in multilayer thin films using PVD method

Author(s):  
M. Melvin David Kumar ◽  
Suganthi Devadason ◽  
S. Rajesh
2013 ◽  
Vol 3 (1) ◽  
Author(s):  
Rostam Moradian ◽  
Mohammad Elahi ◽  
Ahmad Hadizadeh ◽  
Mahmoud Roshani ◽  
Atefeh Taghizadeh ◽  
...  

2010 ◽  
Author(s):  
Norhayati Abu Bakar ◽  
Aidhia Rahmi ◽  
Akrajas Ali Umar ◽  
Muhamad Mat Salleh ◽  
Muhammad Yahaya ◽  
...  

2013 ◽  
Vol 17 (08n09) ◽  
pp. 691-702 ◽  
Author(s):  
Jonathan Britton ◽  
Mahmut Durmuş ◽  
Samson Khene ◽  
Vongani Chauke ◽  
Tebello Nyokong

Third order nonlinear optical properties were determined for phthalocyanine complexes 1–10 containing In , Ga and Zn central metals and tetra- or octa-substituted with benzyloxyphenoxy, phenoxy, tert-butylphenoxy and amino groups at peripheral or non-peripheral positions. The phthalocyanines were embedded in poly (methyl methacrylate) polymer in the presence of CdTe quantum dots. All complexes 1–10 were studied in the presence of CdTe quantum dots and embedded in poly (methyl methacrylate) to form thin films. Complex 3 tetrasubstituted with tert-butylphenoxy groups at non-peripheral positions was also studied in the presence of CdS , CdSe quantum dots, fullerenes, single walled carbon nanotubes. Third order nonlinear optical parameters generally increase for Pcs in the presence of CdTe quantum dots.


2014 ◽  
Vol 604 ◽  
pp. 253-259 ◽  
Author(s):  
M.M. El-Nahass ◽  
G.M. Youssef ◽  
Sohaila Z. Noby

2017 ◽  
Vol 2017 ◽  
pp. 1-5 ◽  
Author(s):  
Lei Du ◽  
Zhejun Liu ◽  
Suhua Jiang

We demonstrated the inkjet-printed CdTe quantum dots-polyurethane acrylate thin films and their potential application in the display devices. The water soluble CdTe QDs were synthesized through the wet chemistry and the emission wavelengths can be freely tuned during the preparation process. Combining with the UV curable resin polyurethane acrylate, the QDs inks were prepared and the influence of diluent and water content on the performance of resultant films was studied. The tensile stress of the films cured from the QDs inks with diluent increased from 10.6 MPa to 27.5 MPa and the low water content led to uniform polymer matrix. Furthermore, the existence of diluent and low water content would all improve the fluorescence stability of the thin films. Finally, the thin films can be deposited on different substrates and well controlled to meet the RGB color standard, which will pave the way to a simple, low-cost, large-scale, and highly reliable method for the application of flexible displays.


Author(s):  
G. Lucadamo ◽  
K. Barmak ◽  
C. Michaelsen

The subject of reactive phase formation in multilayer thin films of varying periodicity has stimulated much research over the past few years. Recent studies have sought to understand the reactions that occur during the annealing of Ni/Al multilayers. Dark field imaging from transmission electron microscopy (TEM) studies in conjunction with in situ x-ray diffraction measurements, and calorimetry experiments (isothermal and constant heating rate), have yielded new insights into the sequence of phases that occur during annealing and the evolution of their microstructure.In this paper we report on reactive phase formation in sputter-deposited lNi:3Al multilayer thin films with a periodicity A (the combined thickness of an aluminum and nickel layer) from 2.5 to 320 nm. A cross-sectional TEM micrograph of an as-deposited film with a periodicity of 10 nm is shown in figure 1. This image shows diffraction contrast from the Ni grains and occasionally from the Al grains in their respective layers.


Author(s):  
K. Barmak

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.


Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.


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