Laser induced damage threshold studies of HfO2-SiO2 composite thin films

2012 ◽  
Author(s):  
R. B. Tokas ◽  
N. M. Kamble ◽  
S. Jena ◽  
S. Thakur ◽  
A. K. Poswal ◽  
...  
Keyword(s):  
Thin Films ◽  
Damage Threshold ◽  
Composite Thin Films ◽  
Laser Induced Damage

Optical, Structural and Laser-Induced Damage Threshold Properties of HfO 2 Thin Films Prepared by Electron Beam Evaporation

2005 ◽  
Vol 22 (5) ◽  
pp. 1246-1248 ◽  
Author(s):  
Zhan Mei-Qiong ◽  
Zhang Dong-Ping ◽  
Tan Tian-Ya ◽  
He Hong-Bo ◽  
Shao Jian-Da ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Damage Threshold ◽  
Electron Beam Evaporation ◽  
Laser Induced Damage

Optical properties and laser damage threshold of HfO2–SiO2 mixed composite thin films

2014 ◽  
Vol 53 (5) ◽  
pp. 850 ◽  
Author(s):  
Shuvendu Jena ◽  
Raj Bahadur Tokas ◽  
Nitin M. Kamble ◽  
Sudhakar Thakur ◽  
Naba Kishore Sahoo
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Damage Threshold ◽  
Laser Damage Threshold ◽  
Laser Damage ◽  
Composite Thin Films

Influence of Laser-Conditioning on Laser-Induced Damage Properties of ZnSe Thin Films

2012 ◽  
Vol 602-604 ◽  
pp. 1437-1443
Author(s):  
Feng Zou ◽  
Jun Qi Xun ◽  
Jun Hong Su ◽  
Jian Bo Ma
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Wave Length ◽  
Single Layer ◽  
Damage Threshold ◽  
Processing Parameters ◽  
Spot Size ◽  
Pulse Number ◽  
Optical Films ◽  
Laser Induced Damage

With the development of high power laser systems, laser protection of optical components becomes more and more important. In order to enhance the laser-induced damage capability of optical films components, besides advanced methods and processes, post-treatment has significant influence on the laser-induced damage threshold (LIDT) of thin films. Q switch Nd:YAG laser of the working wave length at 1064nm, was used to post process on ZnSe single layer films with thickness of /2 (=1064nm) deposited by thermal evaporation, and the laser-induced damage and optical properties were investigated. By changing the energy density and pulse number under the spot size remained a fixed value, their effects on thin films damage threshold were studied respectively, the optimal processing parameters were obtained: energy density is 3.0 J/cm2 and pulse number is 1.The LIDT of post processed ZnSe films was improved from 5.0J/cm2 to 8.2J/cm2.

Influence of Annealing Temperature on Structure, Optical Loss and Laser-Induced Damage Threshold of TiO 2 Thin Films

2007 ◽  
Vol 24 (10) ◽  
pp. 2967-2969 ◽  
Author(s):  
Tian Guang-Lei ◽  
Wu Shi-Gang ◽  
Yang Lu-Yun ◽  
Shu Kang-Ying ◽  
Qin Lai-Shun ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Optical Loss ◽  
Damage Threshold ◽  
Laser Induced Damage

Anisotropic Laser-Induced Damage Threshold and Residual Stress of TiO2 Sculptured Thin Films

2013 ◽  
Vol 13 (2) ◽  
pp. 824-828 ◽  
Author(s):  
Xiudi Xiao ◽  
Lei Miao ◽  
Ming Zhang ◽  
Gang Xu ◽  
Jianda Shao ◽  
...  
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Damage Threshold ◽  
Sculptured Thin Films ◽  
Laser Induced Damage
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