Effect of residual impurities on transport properties of β-FeSi2 epitaxial films grown by molecular beam epitaxy

2012 ◽  
Vol 112 (1) ◽  
pp. 013702 ◽  
Author(s):  
Y. Terai ◽  
K. Yoneda ◽  
K. Noda ◽  
N. Miura ◽  
Y. Fujiwara
Keyword(s):  
Molecular Beam Epitaxy ◽  
Transport Properties ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
Residual Impurities

Hole transport properties of B-doped relaxed SiGe epitaxial films grown by molecular beam epitaxy

2003 ◽  
Vol 251 (1-4) ◽  
pp. 689-692 ◽  
Author(s):  
Shinji Koh ◽  
Kazuhiro Murata ◽  
Toshifumi Irisawa ◽  
Kiyokazu Nakagawa ◽  
Yasuhiro Shiraki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Transport Properties ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
Hole Transport

Magnetic and Transport Properties of Co1+xFeV1−xSi Epitaxial Films Grown by Molecular Beam Epitaxy

2019 ◽  
Vol 55 (2) ◽  
pp. 1-4 ◽  
Author(s):  
Shinya Yamada ◽  
Shinya Kobayashi ◽  
Keisuke Arima ◽  
Kohei Hamaya
Keyword(s):  
Molecular Beam Epitaxy ◽  
Transport Properties ◽  
Molecular Beam ◽  
Epitaxial Films

Effects of substrate type on the characteristics of GaN epitaxial films grown by molecular beam epitaxy

1997 ◽  
Vol 12 (7) ◽  
pp. 917-920 ◽  
Author(s):  
T S Cheng ◽  
C T Foxon ◽  
G B Ren ◽  
J W Orton ◽  
Yu V Melnik ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
Substrate Type

scholarly journals Fabrication of As-doped n-type BaSi2 epitaxial films grown by molecular beam epitaxy

2020 ◽  
Vol 59 (SF) ◽  
pp. SFFA01
Author(s):  
Sho Aonuki ◽  
Yudai Yamashita ◽  
Kaoru Toko ◽  
Takashi Suemasu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Films

Manifestation of the DX Centre in Heavily δ-Doped GaAs(Si)

1992 ◽  
Vol 281 ◽  
Author(s):  
S. Arscott ◽  
M. Missous ◽  
L. Dobaczewski ◽  
P. C. Harness ◽  
D. K. Maude ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Transport Properties ◽  
Electron Concentration ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Wave Functions ◽  
Potential Well ◽  
Electronic Wave ◽  
Hall Measurements ◽  
Electronic Wave Functions

ABSTRACTShubnikov-de Haas and Hall measurements have been performed on singly delta doped GaAs(Si) structures, grown by molecular beam epitaxy, enabling us to study the effects of illumination and temperature upon bulk and individual subband, mobilities and carrier concentrations. In a highly doped sample, where the peak 3D electron concentration approaches 2×1019cm−3, we have observed novel changes in subband transport characteristics, not observed in the lower doped samples, which we attribute to the presence of DX centre phenomena. This paper explains the variations in individual subband transport properties due to a possible shift of the electronic wave functions contained in the potential well. This shift occurs due to a recombination-autoionization(R-A) process involving filled DX centres and free holes upon sample illumination at low temperatures.

Epitaxial τMnAl/AlAs/GaAs Heterostructures with Perpendicular Magnetization

1991 ◽  
Vol 231 ◽  
Author(s):  
T. Sands ◽  
J.P. Harbison ◽  
S.J. Allen ◽  
M.L Leadbeater ◽  
T.L Cheeks ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Hall Effect ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
Subsequent Annealing ◽  
Perpendicular Magnetization ◽  
Gaas Substrates ◽  
Extraordinary Hall Effect ◽  
Hysteretic Characteristics

AbstractEpitaxial films of ferromagnetic τMnAl with perpendicular magnetization have been grown on {100}AlAs/GaAs substrates by molecular beam epitaxy. A multistep growth procedure involving the formation of a template followed by codeposition and subsequent annealing yields thin epitaxial τMnA1 films that exhibit the extraordinary Hall effect with nearly ideal hysteretic characteristics.

Growth and characterization of In2Se3 epitaxial films by molecular beam epitaxy

1997 ◽  
Vol 175-176 ◽  
pp. 1045-1050 ◽  
Author(s):  
Tamotsu Okamoto ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Films
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