Coulomb blockade effect simulation to the electrical characteristic of silicon based single electron transistor

2012 ◽  
Author(s):  
Mohamad Insan Nugraha ◽  
Yudi Darma
Keyword(s):  
Coulomb Blockade ◽  
Electrical Characteristic ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Silicon Based

scholarly journals Simulation and Modeling of Silicon Based Single Electron Transistor

2018 ◽  
Vol 8 (2) ◽  
pp. 900
Author(s):  
Malik Ashter Mehdy ◽  
Mariagrazia Graziano ◽  
Gianluca Piccinini
Keyword(s):  
Transmission Spectrum ◽  
Coulomb Blockade ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Silicon Quantum Dot ◽  
Proposed Model ◽  
Current Voltage ◽  
Transport Direction ◽  
Silicon Based ◽  
Non Equilibrium

<p>In this work, we simulated and modeled silicon quantum dot based single electron transistor (SET). We simulated the device using non-equilibrium Green’s function (NEGF) formalism in transport direction coupled with Schrodinger equation in transverse directions. The characteristics of SET such as Coulomb blockade and Coulomb diamonds were observed. We also present a new efficient model to calculate the current voltage (IV) characteristics of the SET. The IV characteristic achieved from the model are very similar to those from simulations both in shape and magnitude. The proposed model is capable of reproducing the Coulomb diamond diagram in good agreement with the simulations. The model, which is based on transmission spectrum, is simple, efficient and provides insights on the physics of the device. The transmission spectrum at equilibrium is achieved from simulations and given as input to the model. The model then calculates the evolved transmission spectra at non-equilibrium conditions and evaluates the current using Landauers formula.</p>

scholarly journals Modeling and Simulation of Single-Electron Transistor (SET) with Aluminum Island Using Neural Network

2019 ◽  
Vol 12 (1) ◽  
pp. 23-28
Author(s):  
Mostefai Abdelkrim
Keyword(s):  
Neural Network ◽  
Modeling And Simulation ◽  
Coulomb Blockade ◽  
Electrical Characteristic ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Simulation Process ◽  
Transistor Model

Abstract SET is important in the field of nanoelectronics since a decade. This paper presents electrical characteristic of Single-Electron Transistor (SET) with Aluminum Island using Neural Network. The I-V characteristic of the Single-Electron Transistor (SET) is predicted according to different parameters (VG, T, VD, C, and R). The simulation process is based on analytical transistor model and neural network transistor model. Single Electron Transistor (SET) is the simplest device in which the effect of Coulomb blockade can be observed.

CHARGE STABILITY AND CONDUCTANCE ANALYSIS OF ANTHRACENE-BASED SINGLE ELECTRON TRANSISTOR

2013 ◽  
Vol 12 (06) ◽  
pp. 1350045 ◽  
Author(s):  
ANURAG SRIVASTAVA ◽  
BODDEPALLI SANTHIBHUSHAN ◽  
PANKAJ DOBWAL
Keyword(s):  
Coulomb Blockade ◽  
Density Functional ◽  
Stability Diagram ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Functional Theory ◽  
Charge Stability ◽  
Anthracene Molecule ◽  
The Stability ◽  
Experimental Values

The present paper discusses the investigation of electronic properties of anthracene-based single electron transistor (SET) operating in coulomb blockade region using Density Functional Theory (DFT) based Atomistix toolkit-Virtual nanolab. The charging energies of anthracene molecule in isolated as well as electrostatic SET environments have been calculated for analyzing the stability of the molecule for different charge states. Study also includes the analysis of SET conductance dependence on source/drain and gate potentials in reference to the charge stability diagram. Our computed charging energies for anthracene in isolated environment are in good agreement with the experimental values and the proposed anthracene SET shows good switching properties in comparison to other acene series SETs.

scholarly journals Cooper-pair resonances and subgap Coulomb blockade in a superconducting single-electron transistor

2007 ◽  
Vol 76 (17) ◽  
Author(s):  
J. J. Toppari ◽  
T. Kühn ◽  
A. P. Halvari ◽  
J. Kinnunen ◽  
M. Leskinen ◽  
...  
Keyword(s):  
Coulomb Blockade ◽  
Cooper Pair ◽  
Single Electron ◽  
Single Electron Transistor

Enhancement of Coulomb blockade and tunability by multidot coupling in a silicon-on-insulator-based single-electron transistor

1999 ◽  
Vol 75 (4) ◽  
pp. 566-568 ◽  
Author(s):  
J. W. Park ◽  
K. S. Park ◽  
B. T. Lee ◽  
C. H. Lee ◽  
S. D. Lee ◽  
...  
Keyword(s):  
Coulomb Blockade ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistor

Quantum Size Effect Simulation on the Electronic Characteristic of Silicon Based Single Electron Transistor

2011 ◽  
Author(s):  
Mohamad Insan Nugraha ◽  
Adha Sukma Aji ◽  
Fitria Rahayu ◽  
Yudi Darma ◽  
Ferry Iskandar ◽  
...  
Keyword(s):  
Size Effect ◽  
Quantum Size Effect ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Quantum Size ◽  
Electronic Characteristic ◽  
Silicon Based
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