scholarly journals Energy band bending induced charge accumulation at fullerene/bathocuproine heterojunction interface

2012 ◽  
Vol 100 (24) ◽  
pp. 243301 ◽  
Author(s):  
Shenghao Wang ◽  
Takeaki Sakurai ◽  
Ryusuke Kuroda ◽  
Katsuhiro Akimoto
Keyword(s):  
Energy Band ◽  
Charge Accumulation ◽  
Band Bending ◽  
Energy Band Bending ◽  
Induced Charge

Enhanced exciton separation through negative energy band bending at grain boundaries of Cu2ZnSnSe4 thin-films

2011 ◽  
Vol 99 (8) ◽  
pp. 082103 ◽  
Author(s):  
A. R. Jeong ◽  
W. Jo ◽  
S. Jung ◽  
J. Gwak ◽  
J. H. Yun
Keyword(s):  
Thin Films ◽  
Grain Boundaries ◽  
Energy Band ◽  
Negative Energy ◽  
Band Bending ◽  
Energy Band Bending

ESEM Imaging of P-N Junctions Using a Gaseous Secondary Electron Detector

1999 ◽  
Vol 5 (S2) ◽  
pp. 288-289
Author(s):  
M.R. Phillips ◽  
M. Toth ◽  
D. Drouin
Keyword(s):  
Energy Band ◽  
Ohmic Contacts ◽  
Secondary Electron ◽  
Semiconductor Device ◽  
Band Bending ◽  
Electron Detector ◽  
Current Amplifier ◽  
Dopant Level ◽  
Energy Band Bending ◽  
Power Diode

Contrast in secondary electron images of p-n junctions has been observed using a FESEM operating at 1kV. This contrast has been attributed to energy band-bending effects and dopant level variations. In this paper, we report that contrast from the depletion layer of a p-n junction can be obtained in an ESEM using a gaseous secondary electron detector (GSED). The contrast is caused by a signal induced in the GSED by charging and discharging of the device.A 1N4002 p+pn silicon power diode was cross-sectioned along the lead axis to expose the Ag ohmic contacts and the semiconductor device. The section was mechanically polished to an optical finish using diamond abrasives and mounted in a holder which allowed electrical connection to both the p and n sides of the diode. Imaging experiments were performed in a Philips Electroscan XL30 ESEM and a JEOL 6300F below-lens FESEM. Current images were obtained with a GW Electronics 103 specimen current amplifier.

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